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36th RD50 Workshop (CERN - - online Workshop)

from Wednesday 3 June 2020 (09:00) to Friday 5 June 2020 (17:00)


        : Sessions
    /     : Talks
        : Breaks
3 Jun 2020
4 Jun 2020
5 Jun 2020
AM
09:40
Welcome (until 10:00) ()
09:40 Welcome - Michael Moll (CERN)   ()
10:00
Defect Characterization (until 13:00) ()
10:00 Quantum characteristics of electron and hole quasiparticles in silicon defects - Prof. Darius Abramavicius (Institute of Chemical Physics, Vilnius University)   ()
10:20 Electron mobility dependence on neutron and electron irradiation fluence in Si - Prof. Juozas Vaitkus (Vilnius University, Institute of Photonics and Nanotechnology)   ()
10:40 Update on Radiation damage investigation of epitaxial P type Silicon using Schottky / pn junctions and LGAD - GaN activities at RAL - Enrico Giulio Villani (Science and Technology Facilities Council STFC (GB))   ()
11:00 --- Break ---
11:20 DLTS and TSC techniques: A brief introduction - Anja Himmerlich (CERN)   ()
11:40 Defect characterization in boron doped silicon sensors after exposure to protons, neutrons and electrons - Yana Gurimskaya (CERN)   ()
12:00 DLTS studies on as irradiated PiN diodes of different resistivity - Ioana Pintilie (NIMP Bucharest-Magurele, Romania)   ()
12:20 Discussion Session: Defect Characterization & Acceptor Removal - Ioana Pintilie (NIMP Bucharest-Magurele, Romania)   ()
10:00
Simulations - Joern Schwandt (Hamburg University (DE)) (until 11:30) ()
10:00 [AS] TCAD Simulation of Radiation Damage for LGAD Sensor - Tao Yang (Chinese Academy of Sciences (CN))   ()
10:20 [AS] TRACS development for LGAD sensor - Suyu Xiao (Chinese Academy of Sciences (CN))   ()
10:40 Simulation of thickness dependence of time resolution for simple planar devices. - Marius Mahlum Halvorsen (Norwegian University of Science and Technology (NTNU) (NO))   ()
11:00 Discussion: Simulations - Joern Schwandt (Hamburg University (DE))   ()
11:30
LGAD -Dr Salvador Hidalgo Villena (Instituto de Microelectronica de Barcelona (IMB-CNM-CSIC)) (until 17:20) ()
11:30 [AS] Radiation performance of the Low Gain Avalanche Diodes developed by NDL and IHEP in China - Dr Yunyun Fan (IHEP)   ()
11:50 First LGAD timing/jitter measurement at ELI with fs-lasers of 800 nm and 1450 nm - Prof. Gordana Lastovicka-Medin (University of Montenegro)   ()
12:10 --- Lunch Break ---
13:20 Investigation of LGAD performance dependence on neutron flux - Gregor Kramberger (Jozef Stefan Institute (SI))   ()
13:40 Annealing effects on operation of thin Low Gain Avalanche Detectors - Alissa Howard (Jozef Stefan Institute (JSI))   ()
14:00 AC-LGAD strip sensor measurements with 120 GeV protons - Karri Folan Di Petrillo (Fermi National Accelerator Lab. (US))   ()
14:20 --- Break ---
14:40 Latest results on RSD spatial and timing resolution - Marta Tornago (Universita e INFN Torino (IT))   ()
15:00 Position reconstruction using machine learning algorithms applied to Resistive Silicon Detectors (RSD) - Federico Siviero (Universita e INFN Torino (IT))   ()
15:20 Acceptor removal and gain Reduction in proton and neutron irradiated LGADs - Evangelos - Gkougkousis (Conseil Europeen Recherche Nucl. (CERN)-Unknown-Unknown)   ()
15:40 [US] Deep Junction LGAD: a new approach to high granularity LGAD - Yuzhan Zhao (University of California,Santa Cruz (US))   ()
16:00 --- Break ---
16:20 [US] Energy dependence of the acceptor removal by protons for several UFSD types - Hartmut Sadrozinski (University of California,Santa Cruz (US))   ()
16:40 Discussion Session: LGAD - Ivan Vila Alvarez (Instituto de Física de Cantabria (CSIC-UC)) Salvador Hidalgo Villena (Instituto de Microelectronica de Barcelona (IMB-CNM-CSIC))   ()
11:00 CERN EP seminar: Innovative silicon sensors for future trackers - Nicolo Cartiglia (INFN Torino (IT))   ()
PM
14:00
Detector Characterization, NIEL and Irradiation Facilities (until 17:00) ()
14:00 Determination of the proton related damage on commercial and high-ohmic silicon pad diodes - Konstantinos Nikolopoulos (University of Birmingham (GB))   ()
14:20 Fluence profiling at JSI TRIGA reactor irradiation facility - Valentina Sola (Universita e INFN Torino (IT))   ()
14:40 Measurement of the charge collection for the irradiated $\text{n}^{+}\text{p}\text{p}^+$ pad diode in the region of the $\text{n}^{+}\text{p}$ interface - Mohammadtaghi Hajheidari (Hamburg University (DE))   ()
15:00 Timing resolution on a 3D silicon pixel detector - Dario De Simone (Universitaet Zuerich (CH))   ()
15:20 --- Break ---
15:40 Investigation on the effects of trapped charge on the signal from subsequent laser pulses in irradiated p-type sensors - Leena Diehl (Albert Ludwigs Universitaet Freiburg (DE))   ()
16:00 TPA-TCT -- Two Photon Absorption - Transient Current Technique - Moritz Oliver Wiehe (Albert Ludwigs Universitaet Freiburg (DE))   ()
16:20 1550 nm Femtosecond Fiber Laser System for the Two-Photon Excitation of Transient Currents in Semiconductor Detectors - P. Pérez-Millán (FYLA LASER SL)   ()
16:40 [US] Measurement of the silicon effective band gap energy with the ATLAS pixel detector - Aidan Grummer (University of New Mexico (US))   ()
17:30
Collaboration Board (until 20:30) ()
13:00
CMOS - Eva Vilella Figueras (University of Liverpool (GB)) (until 16:00) ()
13:00 Radiation tolerant small-pixel passive CMOS sensors with RD53A readout - Yannick Manuel Dieter (University of Bonn (DE))   ()
13:20 First tests and characterization of the RD50-MPW2 active pixel matrix, bandgap voltage reference and SEU tolerant memory - Dr Ricardo Marco Hernandez (CERN)   ()
13:40 A reconfigurable HR-CMOS sensor for Tracking, Pre-Shower and Digital Electromagnetic Calorimetry - Ioannis Kopsalis (University of Birmingham (GB))   ()
14:00 Initial I-V and e-TCT measurements of a depleted CMOS sensor within the CERN-RD50 collaboration - Matthew Lewis Franks   ()
14:20 --- Break ---
14:50 Data acquisition system for the characterization of the RD50 HV-CMOS active pixel matrix prototypes - Christian Irmler (Austrian Academy of Sciences (AT))   ()
15:10 [US] Effects of neutron irradiation on HV-JFETs - Dr Gabriele Giacomini (Brookhaven National Laboratory (US))   ()
15:30 Discussion on CMOS devices - Eva Vilella Figueras (University of Liverpool (GB))   ()
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