Focus on:  Hide Contributions
Back to Conference View
Login
36th RD50 Workshop (CERN - - online Workshop)

from Wednesday, June 3, 2020 (9:00 AM) to Friday, June 5, 2020 (5:00 PM)


        : Sessions
    /     : Talks
        : Breaks
Jun 3, 2020
Jun 4, 2020
Jun 5, 2020
AM
9:40 AM
Welcome (until 10:00 AM)
9:40 AM Welcome - Michael Moll (CERN)  
10:00 AM
Defect Characterization (until 1:00 PM)
10:00 AM Quantum characteristics of electron and hole quasiparticles in silicon defects - Prof. Darius Abramavicius (Institute of Chemical Physics, Vilnius University)  
10:20 AM Electron mobility dependence on neutron and electron irradiation fluence in Si - Prof. Juozas Vaitkus (Vilnius University, Institute of Photonics and Nanotechnology)  
10:40 AM Update on Radiation damage investigation of epitaxial P type Silicon using Schottky / pn junctions and LGAD - GaN activities at RAL - Enrico Giulio Villani (Science and Technology Facilities Council STFC (GB))  
11:00 AM --- Break ---
11:20 AM DLTS and TSC techniques: A brief introduction - Anja Himmerlich (CERN)  
11:40 AM Defect characterization in boron doped silicon sensors after exposure to protons, neutrons and electrons - Yana Gurimskaya (CERN)  
12:00 PM DLTS studies on as irradiated PiN diodes of different resistivity - Ioana Pintilie (NIMP Bucharest-Magurele, Romania)  
12:20 PM Discussion Session: Defect Characterization & Acceptor Removal - Ioana Pintilie (NIMP Bucharest-Magurele, Romania)  
10:00 AM
Simulations - Joern Schwandt (Hamburg University (DE)) (until 11:30 AM)
10:00 AM [AS] TCAD Simulation of Radiation Damage for LGAD Sensor - Tao Yang (Chinese Academy of Sciences (CN))  
10:20 AM [AS] TRACS development for LGAD sensor - Suyu Xiao (Chinese Academy of Sciences (CN))  
10:40 AM Simulation of thickness dependence of time resolution for simple planar devices. - Marius Mahlum Halvorsen (Norwegian University of Science and Technology (NTNU) (NO))  
11:00 AM Discussion: Simulations - Joern Schwandt (Hamburg University (DE))  
11:30 AM
LGAD -Dr Salvador Hidalgo Villena (Instituto de Microelectronica de Barcelona (IMB-CNM-CSIC)) (until 5:20 PM)
11:30 AM [AS] Radiation performance of the Low Gain Avalanche Diodes developed by NDL and IHEP in China - Dr Yunyun Fan (IHEP)  
11:50 AM First LGAD timing/jitter measurement at ELI with fs-lasers of 800 nm and 1450 nm - Prof. Gordana Lastovicka-Medin (University of Montenegro)  
12:10 PM --- Lunch Break ---
1:20 PM Investigation of LGAD performance dependence on neutron flux - Gregor Kramberger (Jozef Stefan Institute (SI))  
1:40 PM Annealing effects on operation of thin Low Gain Avalanche Detectors - Alissa Howard (Jozef Stefan Institute (JSI))  
2:00 PM AC-LGAD strip sensor measurements with 120 GeV protons - Karri Folan Di Petrillo (Fermi National Accelerator Lab. (US))  
2:20 PM --- Break ---
2:40 PM Latest results on RSD spatial and timing resolution - Marta Tornago (Universita e INFN Torino (IT))  
3:00 PM Position reconstruction using machine learning algorithms applied to Resistive Silicon Detectors (RSD) - Federico Siviero (Universita e INFN Torino (IT))  
3:20 PM Acceptor removal and gain Reduction in proton and neutron irradiated LGADs - Evangelos - Gkougkousis (Conseil Europeen Recherche Nucl. (CERN)-Unknown-Unknown)  
3:40 PM [US] Deep Junction LGAD: a new approach to high granularity LGAD - Yuzhan Zhao (University of California,Santa Cruz (US))  
4:00 PM --- Break ---
4:20 PM [US] Energy dependence of the acceptor removal by protons for several UFSD types - Hartmut Sadrozinski (University of California,Santa Cruz (US))  
4:40 PM Discussion Session: LGAD - Ivan Vila Alvarez (Instituto de Física de Cantabria (CSIC-UC)) Salvador Hidalgo Villena (Instituto de Microelectronica de Barcelona (IMB-CNM-CSIC))  
11:00 AM CERN EP seminar: Innovative silicon sensors for future trackers - Nicolo Cartiglia (INFN Torino (IT))  
PM
2:00 PM
Detector Characterization, NIEL and Irradiation Facilities (until 5:00 PM)
2:00 PM Determination of the proton related damage on commercial and high-ohmic silicon pad diodes - Konstantinos Nikolopoulos (University of Birmingham (GB))  
2:20 PM Fluence profiling at JSI TRIGA reactor irradiation facility - Valentina Sola (Universita e INFN Torino (IT))  
2:40 PM Measurement of the charge collection for the irradiated $\text{n}^{+}\text{p}\text{p}^+$ pad diode in the region of the $\text{n}^{+}\text{p}$ interface - Mohammadtaghi Hajheidari (Hamburg University (DE))  
3:00 PM Timing resolution on a 3D silicon pixel detector - Dario De Simone (Universitaet Zuerich (CH))  
3:20 PM --- Break ---
3:40 PM Investigation on the effects of trapped charge on the signal from subsequent laser pulses in irradiated p-type sensors - Leena Diehl (Albert Ludwigs Universitaet Freiburg (DE))  
4:00 PM TPA-TCT -- Two Photon Absorption - Transient Current Technique - Moritz Oliver Wiehe (Albert Ludwigs Universitaet Freiburg (DE))  
4:20 PM 1550 nm Femtosecond Fiber Laser System for the Two-Photon Excitation of Transient Currents in Semiconductor Detectors - P. Pérez-Millán (FYLA LASER SL)  
4:40 PM [US] Measurement of the silicon effective band gap energy with the ATLAS pixel detector - Aidan Grummer (University of New Mexico (US))  
5:30 PM
Collaboration Board (until 8:30 PM)
1:00 PM
CMOS - Eva Vilella Figueras (University of Liverpool (GB)) (until 4:00 PM)
1:00 PM Radiation tolerant small-pixel passive CMOS sensors with RD53A readout - Yannick Manuel Dieter (University of Bonn (DE))  
1:20 PM First tests and characterization of the RD50-MPW2 active pixel matrix, bandgap voltage reference and SEU tolerant memory - Dr Ricardo Marco Hernandez (CERN)  
1:40 PM A reconfigurable HR-CMOS sensor for Tracking, Pre-Shower and Digital Electromagnetic Calorimetry - Ioannis Kopsalis (University of Birmingham (GB))  
2:00 PM Initial I-V and e-TCT measurements of a depleted CMOS sensor within the CERN-RD50 collaboration - Matthew Lewis Franks  
2:20 PM --- Break ---
2:50 PM Data acquisition system for the characterization of the RD50 HV-CMOS active pixel matrix prototypes - Christian Irmler (Austrian Academy of Sciences (AT))  
3:10 PM [US] Effects of neutron irradiation on HV-JFETs - Dr Gabriele Giacomini (Brookhaven National Laboratory (US))  
3:30 PM Discussion on CMOS devices - Eva Vilella Figueras (University of Liverpool (GB))  
Powered by Indico v3.3.7-pre