Speaker
Matteo Cecchetto
(Universite Montpellier II (FR))
Description
Neutrons with energies between 0.1-10 MeV can significantly impact the Soft Error Rate (SER) in SRAMs and other microelectronics manufactured in scaled technologies, with respect to high-energy neutrons. Experimental measurements benchmarked with Monte Carlo simulations showed that neutrons with these energies can induce more than 60% of the overall upset rate in accelerator applications.