Speaker
Corinna Martinella
(University of Jyväskylä (FI))
Description
Accelerated terrestrial neutron irradiations were performed on commercial SiC power MOSFETs with planar, trench and double-trench architectures. Enhanced gate and drain leakage were observed in some devices which did not exhibit a destructive failure during the exposure. Failure cross-sections and FIT rates are discussed for the three architectures.
