Electron-induced SEEs in SDRAMs and dosimetry of a pulsed electron beam

17 May 2021, 11:20
25m
CERN

CERN

Speakers

Daniel Paul Soderstrom (University of Jyvaskyla - RADSAGA ESR2) Daniel Söderström

Description

Electron-induced radiation effects in electronics becomes increasingly important as technology node sizes decrease. In this presentation, results of electron-induced single-event effects on SDRAMs are presented, and in particular stuck bits are discussed. Novel means of monitoring a pulsed electron beam using doped silica glass rods and optical fibers are also presented.

Presentation materials