Speaker
Salvatore Guagliardo
(Université de Montpellier - RADSAGA ESR10)
Description
Single Event latchup (SEL) is a potential catastrophic condition that affects CMOS technology. If a radiation particle hits the component, electron-hole pairs are generated in the structure and thus they can lead to the activation of the parasitic thyristors if the deposited energy is large enough. However, the deposited energy by the radiation particle is not the only parameter to consider as far as SEL sensitivity is concerned. In this work, we have analyzed the effects of different parameters on SEL sensitivity using TCAD tools. Moreover, we have investigated how to predict SEL by means of TCAD simulations.
