In WP1, an extensive review of radiation test facilities involved in the consortium was carried out. The homogeneous description and comparison of the relevant test parameters (i.e. particle flux, energy spectra, beam size, etc.) in different European test facilities provides a valuable information for the European industry to select test facilities and prepare radiation test campaigns focused...
Single event cross sections caused by direct ionization effects in sub micron technology are investigated. Focus is on the modeling of the proton direct ionization cross section. Good agreement between modeled, simulated and experimental values has been achieved. Furthermore proton direct ionization cross-sections for heavy ions will be considered.
Electron-induced radiation effects in electronics becomes increasingly important as technology node sizes decrease. In this presentation, results of electron-induced single-event effects on SDRAMs are presented, and in particular stuck bits are discussed. Novel means of monitoring a pulsed electron beam using doped silica glass rods and optical fibers are also presented.
In order to investigate the capability of a silicon microdosimeter and the PTW microDiamond detector to measure LET distributions, an experimental set-up has been developed at UMCG. The vacuum chamber is suitable for measurements with different detectors with the potential of adding new devices and can be directly attached to the beamline at the UMCG PARTREC accelerator facility. In the...
The radiation environment in space poses unique challenges to the successful operation of electronic components exposed to it. It is hence important to test the devices sufficiently before their integrating them in space missions, if possible already during their design phase. Likewise, radiation effects on electronics pose reliability and availability threats for high-energy accelerator...
A flexible SRAM based SEU radiation monitor has been designed, simulated and tested. Its SEU sensitivity can be tuned by varying the cells supply voltage. The data collected from heavy ions, high-energy protons, neutrons and low-energy protons shows that changing the core voltage of the chip can significantly affect the SEU sensitivity.
