Conveners
LGAD
- Giovanni Calderini (Centre National de la Recherche Scientifique (FR))
- Giovanni Calderini (Centre National de la Recherche Scientifique (FR))
LGAD
- Hartmut Sadrozinski (SCIPP, UC santa Cruz)
- Hartmut Sadrozinski (University of California,Santa Cruz (US))
- Hartmut Sadrozinski (University of California: Santa Cruz)
LGAD
- Yoshinobu Unno (High Energy Accelerator Research Organization (JP))
LGAD
- Nicolo Cartiglia (INFN Torino (IT))
The second production of resistive silicon detectors at FBK, RSD2, features several innovative designs of the electrode geometry aiming to maximize signal sharing among a well-defined number of pads. This talk presents the first results obtained with the "cross" geometry, where the metal of the pads is shaped like a cross.
This geometry is particularly well suited to maximize charge sharing...
In this contribution, we present a new development of radiation-resistant silicon sensors. This innovative sensor design exploits the recently observed saturation of radiation damage effects on silicon, together with the usage of thin substrates, intrinsically less affected by radiation. The internal multiplication of the charge carriers will be used to overcome the small signals coming from...
Single photon detection of X-rays in the energy range of 250 eV to 1 keV for hybrid detectors is difficult due to the low quantum efficiency (QE) and to the low signal-to-noise ratio (SNR). The low QE is caused by the absorption of soft X-rays in the insensitive layers of the silicon sensor (entrance window). The entrance window is typically from a few hundred nanometers to a couple of...
Low Gain Avalanche Diodes (LGADs) are state-of-the-art silicon sensors for 4D tracking in high energy physics applications. A limitation of LGAD technology is the no-gain area (50-100µm) between adjacent pixels, which reduces the fill-factor (active area/total area) of the sensor. FBK proposed a novel strategy of LGAD-segmentation based on narrow trenches, that could potentially reduce the...
Using high resolution Secondary Ion Mass Spectroscopy (SIMS), the gain layer doping profiles of carbonated FBK UFSD 2 and CNM RUN 10478 LGADs are evaluated. A combination of $^{55}$Cs$^{-}$ and $^{16}$O$^{+}$ primary ion driven campaigns yield a high sensitivity in the order of 1.35 $×$ 10$^{14}$ $atoms/cm^{3}$ for Boron concentrations along with a precise depth estimation within ~ 5 $nm$. For...
In this contribution, I present the latest production of Ultra-Fast Silicon Detectors, UFSD4, manufactured by Fondazione Bruno Kessler. The production comprises of 18 wafers; on each wafer there are R&D structures and 12 full sensors prototypes for the Endcap Timing Layer of the CMS experiment at the High Luminosity LHC. Each of this 12 sensors has 16x16 1.3x1.3 mm^2 pads. The new batch...
Low Gain Avalanche Detectors (LGADs) are thin silicon detectors with moderate internal signal amplification. LGADs can provide time resolution as good as 17 pico-seconds for minimum ionizing particles. In addition, the fast rise time and short full charge collection time (as low as 1 ns) of LGADs are suitable for high repetition rate measurements in photon science and other fields. However the...
Low Gain Avalanche Diode (LGAD) detectors are entering the mainstream as sensors planned for use in future particle detectors. However, their granularity is limited due to the need to isolate separate segments (strips or pixels) of the detector through the gain layer, limiting the granularity scale to approximately 1 mm. However, AC-coupled LGADs (AC-LGADs), also known as resistive silicon...
Si-based sensors, like Low Gain Avalanche Detectors (LGAD), operated in the high radiation environment of the CERN-LHC, undergo a degradation in performance that is significantly determined by defects formed during particle-interaction with the Si-crystal. In p-type Si a deactivation of active boron is observed – the so-called “acceptor removal effect” (ARE). One explanation of the ARE is the...
LGAD's failure due to Single Burnout Event and charge collection insufficiency (gain suppression) received a lot of attention recently,
Those radiation and high injection effects have some features in common, both deals with high density of generated charge but what distinguishes them seems to be the main triggering mechanism for another. While SEB induces a localized high-current state,...
Low Gain Avalanche Diodes (LGADs) is one of the most promising sensing technologies for future 4D-tracking applications and has recently been qualified to be used in the ATLAS and CMS timing detectors for the HL-LHC upgrade. LGADs achieve an excellent timing performance due to the presence of an internal gain that improves the signal-to-noise ratio.
These detectors are designed to exhibit a...
The “Perugia 2019 Surface” radiation damage model is a Synopsys Sentaurus Technology CAD (TCAD) numerical model which accounts for surface damage effects induced by radiation on silicon particle detectors. In order to get a complete picture of the phenomena taking place in the volume of the irradiated silicon detectors, the non-ionizing effects, referred to as bulk damage, also need to be...
Clinical outcomes collected over the past three decades have suggested that ion therapy has the potential to be a treatment modality superior to conventional radiation for several types of cancer, including recurrences, as well as for other diseases. Although the results have been encouraging, numerous treatment uncertainties remain a major obstacle to the full exploitation of particle...
Low Gain Avalanche Detectors (LGADs) are a novel silicon sensor technology being developed to design full 4D trackers able to measure precisely both spatial and temporal coordinates. The first deployment of this technology will be in the ATLAS and CMS timing layers at the High Luminosity LHC where, by adding fast timing information to each crossing track, they will allow to better separate...
Low Gain Avalanche Diodes (LGADs) will be employed in the CMS MTD and ATLAS HGTD upgrades to mitigate the high levels of pileup expected in the High Luminosity phase of the LHC. Over the last several years, much attention has focused on the development of radiation tolerant gain implants that successfully provide gain even after the fluences expected at the HL-LHC, in excess of 1 x 10^15...
