Speaker
Description
Using high resolution Secondary Ion Mass Spectroscopy (SIMS), the gain layer doping profiles of carbonated FBK UFSD 2 and CNM RUN 10478 LGADs are evaluated. A combination of $^{55}$Cs$^{-}$ and $^{16}$O$^{+}$ primary ion driven campaigns yield a high sensitivity in the order of 1.35 $×$ 10$^{14}$ $atoms/cm^{3}$ for Boron concentrations along with a precise depth estimation within ~ 5 $nm$. For Carbon profile studies, a 62-hour Caesium pre-sputtering protocol is established which, combined with beam parameter optimization, result in an unprecedented sensitivity of 2 × 10$^{15}$ $atoms/cm^{3}$. Through advanced analysis techniques, conclusions are extracted concerning the implantation dose, energy and activation for Boron and Carbon implants. The latter are validated though Monte-Carlo TCAD process simulations, while Boron de-activation on carbon co-implantation is discussed. Finally, using as input the measured dopant profiles, electrical simulations are presented and compared with previously reported laboratory data.
