Speaker
Ivan Lopez Paz
(The Barcelona Institute of Science and Technology (BIST) (ES))
Description
Silicon Carbide has interesting properties for high temperature, high radiation environment and timing radiation detector applications due to its thermal conductivity (3.7 W/(cm.°C)), atomic displacement threshold (22-35 eV) and high saturation velocity (2.2e7 cm/s). Silicon Carbide detector diodes have been fabricated in IMB-CNM with epitaxially-grown graphene onto Silicon Carbide (EG-SiC) as interface between the implant and the readout electrode, useful for e.g. heavy ion detection by removing metallisation in the active area. In this contribution, the effect of EG in a SiC PiN diode is studied as compared to a SiC sample without graphene by means of the Transient Current Technique.
Authors
Gemma Rius
Dr
Giulio Pellegrini
(Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))
Ivan Lopez Paz
(The Barcelona Institute of Science and Technology (BIST) (ES))
Dr
Joan Marc Rafí
(Consejo Superior de Investigaciones Cientificas (CSIC) (ES))