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11:00
Multistage impact ionization in Si detectors in situ irradiated at 1.9 K
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Artem Shepelev
(Ioffe Institute)
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11:20
Defect characterization studies and modelling of defect spectra for 60Co gamma-irradiated epitaxial p-type Si diodes
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Anja Himmerlich
(CERN)
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11:40
Investigation of high resistivity p-type FZ silicon diodes after 60Co - gamma irradiation
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Chuan Liao
(Hamburg University (DE))
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12:00
Effect of Fe-implantation on the electrical characteristics of p-type Si-based diode.
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Joseph Bodunrin
(Department of Physics, College of Science, Engineering and Technology, University of South Africa, Private Bag X6, Florida, 1710, South Africa)
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12:20
Charge carrier mobility evaluation in Silicon Microstrips detectors exploiting megnetoresistivity effect
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Algirdas Mekys
(Vilnius University)
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12:40
Timing resolution and CCE of n-on-n silicon sensors with TCT setup
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Oscar David Ferrer Naval
(Consejo Superior de Investigaciones Cientificas (CSIC) (ES))