Current trackers and accelerators are populated with silicon detectors which give excellent resolution and time performance and they can withstand high radiation damage. The fabrication of large area silicon detectors such as strips are currently limited to microelectronics foundries since they fabricate a full large area detector (more than 10cm2) with a single mask set. To evaluate the...
In high energy physics, the silicon pixel sensors manufactured in commercial CMOS chip fabrication lines have been proven to have good radiation hardness and spatial resolution. Along with the mature manufacturing techniques and the potential of large throughput provided by the foundries, the so-called "passive CMOS" sensor has become an interesting alternative to standard planer sensors.
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RD50-MPW3, the third HV-CMOS sensor chip iteration designed by the RD50 CMOS Working Group, was delivered during the summer of 2022. RD50-MPW3 has a matrix of 64 × 64 pixels which integrate both analogue and digital readout electronics inside each of them. An optimised digital readout peripheral for effective chip configuration and fast data transmission is included in this chip.
A...
This contribution is a continuation of the talk “RD50-MPW3: Design and initial laboratory evaluation”. This presentation focuses on the readout of the chip including the DAQ framework and preliminary testbeam results, thus it is discussing a distinct topic.
The readout framework is based on the Caribou system (as for our previous chips as well) and details about firmware, data flow and...
Particle detectors systems need state of the art Data Acquisition Systems (DAQ) as backend. This paper presents a new DAQ that handle up to 4 hybrid detectors simultaneously, in a client-server data architecture, oriented to particle tracking experiments. The system is designed for the ROC4SENS read-out chip but is easily adaptable to other pixel detectors. The DAQ is based on a...
We present here the mapping of charge collection efficiency for the MPW2 monolithic detector using the TPA-TCT technique in z-scan mode. The TPA-TCT mappings show the non-homogeneities of the detector pixel electric field due to the biasing and to the presence of microelectronic structures at different depths.The work demonstrate the usefulness of the TPA-TCT mapping to assess the quality of a...
Depleted Monolithic Active Pixel Sensors (DMAPS) has raised as a mainstream technology for high energy physics (HEP) experiments, as they integrate in the same substrate the sensing diode and the readout electronics. This results in cost-effective sensors with less production time and easy module assembly when compared to the hybrid pixel technology.
Current DMAPS do not meet the...
High Voltage CMOS (HV-CMOS) sensors are thin, radiation tolerant and cost-effective position sensitive detectors that have the potential to be the prime candidate for particle tracking applications in the next generation of high energy colliders. The high bias voltage typical of these sensors (~60 V) allows for fast charge collection times, by drift, and good radiation tolerance; combined with...
