The Non-Ionizing Energy Loss (NIEL) concept compares and scales the damage impacted on semiconductor devices in different radiation fields. A particular weakness of the present NIEL concept consists in the inability to predict the different formation rates of cluster and point defects in the silicon (Si) crystal for different particles and particle energies. Specifically, differences between...
Carrier lifetime profiles, measured by diode (PIN and LGAD) edge scanning of microwave probed photoconductivity transients, are considered. The obtained carrier lifetime profiles are compared with the electrical (C V, I V) characteristics obtained on the same structures. It is shown that carrier lifetime variations correspond to the dopant density variations extracted using C-V characteristics...
This study is based on the IV, CV and CCE measurements of p-type Schottky diodes with 50 µm epitaxial layer to investigate the radiation bulk damage. Non-irradiated and various neutron irradiated (1e12, 1e13, 1e14, 1e15 and 1e16 [1MeV n_eq/cm^2]) diodes are being tested at RAL and Carleton University. Properties extracted from the measurements have been used in the TCAD simulations. In this...
Irradiation damages of the n-type silicon have been investigated for a long time, but not for the p-type silicon. This study is to investigate and improve the modeling and understanding of irradiation damage of epitaxial p-type silicon using Schottky diodes and pn junctions exposed to high neutron fluence up to 1e16 1 MeV n_eq/cm^2. This is a continuation of an ongoing project.
This talk...
Multistage impact ionization in Si detectors observed in the unique conditions of the in situ irradiation with 23 GeV proton beam fragmented into 400 ms spills and T = 1.9 K was analyzed using the current pulse responses of detectors irradiated to medium fluences. Within the range 5x10^13 - 2.7x10^14 p/cm2, the responses demonstrated two-stage and three-stage processes of charge collection,...
Two types of high resistivity p-type FZ diodes with p-stop and p-spray isolation between the pad and the guard ring were irradiated with 60Co gamma-rays. The dose values were 10, 20, 100, and 200 Mrad. In this work microscopic (TSC) as well as macroscopic (I-V, C-V) studies on isothermal heat treatments at 80 °C and isochronal annealing from 80 °C up to 300 °C were performed and analyzed for...
The effects of Fe-implantation on the electrical characteristics of Au/p-Si Schottky barrier diodes (SBD) were studied using current-voltage (I–V) and capacitance-voltage (C–V) techniques. The acquired results showed that the Si-based diodes were well fabricated, and Fe-implantation changed the normal diode's I-V behaviour from typical exponential to ohmic. The ohmic behaviour was described in...
Silicon Microstrips detectors were considered as suitable for charge carrier mobility evaluation from magnetoresistivity (MR) phenomena. The top contacts geometry is potentially similar to Corbino disk, which is also used for MR with Hall electric field elimination. However, the appearance of negative MR caused by nonlinear electric field distribution prompted to search for alternative...
In this work we present 2D charge maps, CCE and timing measurements performed on 3D n-on-n silicon double sided 200µm thick sensors irradiated at different fluency levels, ranging from 1e14neq/cm2 to 1e17neq/cm2 on a TCT setup using different laser intensities, mimicking the height of the signal from a beta-source setup, and some multiples of it. We show CCE above 100% at 1E15neq/cm2 fluency...
Capacitance-voltage (CV) measurements are a widely used technique in
silicon detector physics. However, this only works if the sensor is not too heavily irradiated. After irradiation, the measured CV curves show strong frequency dependencies which is not the case before irradiation and thus, the derived parameters vary over a wide range, indicating that the method is not applicable for such...
Signal reduction is the most important radiation damage effect on performance of
silicon tracking detectors in ATLAS. Adjusting sensor bias voltage and detection threshold can
help in mitigating the effects but it
is important to have simulated data that reproduce the evolution of performance with the
accumulation of luminosity, hence fluence.
ATLAS collaboration developed and...
