The resistive read-out AC-coupled LGAD sensors are characterized by internal gain and built-in charge sharing, which can be exploited to achieve unprecedented concurrent time and position resolution. We have recently completed the studies of the 4D-tracking capabilities of the second RSD production manufactured at FBK (RSD2).
In this presentation we are summarizing the results obtained for...
Future innermost tracker detectors will require an enhanced spatial ($<$ 10 $\mu$m) and temporal resolution (50 ps per hit) along with an increased radiation hardness up to fluences of $10^{17}$n$_{eq}$cm$^{-2}$. To mitigate these challenges, a new silicon sensor concept is proposed, providing internal gain without relying on doping, the Silicon Electron Multiplier (SiEM). The SiEM...
Silicon sensors in particle physics experiments like those at the Large Hadron Collider must be able to withstand extreme radiation doses. 3D sensor technology is one of the most promising radiation-hard silicon detector technologies. 3D sensors are currently used in the ATLAS detector, but even more radiation-hard sensors must be developed for future collider experiments. Characterization...
In this contribution, we present the preliminary results from a new batch of radiation-resistant silicon sensors in production at the Fondazione Bruno Kessler (FBK, Italy). The design of the sensors exploits the recently observed saturation of radiation damage effects on silicon, together with the usage of thin substrates, intrinsically less affected by radiation. To cope with the small signal...
The Two Photon Absorption – Transient Current Technique (TPA-TCT) setup at CERN uses a 430 fs pulse fiber lasers, with a wavelength of 1550 nm, which is in the quadratic absorption regime of silicon. Highly focusing optics are used to only generate excess charge carriers in a small volume (approximately 1µm × 1µm × 20µm) around the focal point of the laser beam, which enables a resolution in...
The talk will present the status of the Two Photon Absorption TCT system at JSI Ljubljana. The setup has been equipped with an imaging system for beam location. TPA-TCT was used to characterize an active pixel in the RD50-MPW2 CMOS chip. An attempt to induce Single Event Burnout (SEB) events in irradiated LGAD samples will also be presented.
In this contribution, the performance of a Resistive Silicon Detector (RSD) measured with 4 GeV electrons at the DESY beam test facility is presented. The device-under-test comes from the second RSD production manufactured at FBK (RSD2). The RSD2 sensors feature a different design with respect to the previous production (RSD1), in order to improve the sharing of signals produced by ionizing...
