Edge-TCT simulation of LGADs in RASER

1 Dec 2022, 14:30
20m
Salón de Grados, 2nd Floor (ETSI Seville)

Salón de Grados, 2nd Floor

ETSI Seville

Escuela Técnica Superior de Ingenieros Camino de los Descubrimientos s/n 41092 Isla de la Cartuja, Sevilla Spain

Speaker

Chenxi Fu

Description

RAdiation SEmiconductoR(RASER) is a fast simulation software developed by IHEP to estimate time resolution of SiC PIN diodes, based on which we add new functions to confirm the process of getting electric field of Si-LGADs from edge-TCT. In RASER, the electric field and the weighting field are calculated by FEniCS. The current induced by electron-hole pairs is derived by Shockley-Ramo's theorem. The simulated signal is synthesized with noise taken from experiment as well as the effect of amplifier resistance and detector capacitance. The physical LGADs are fabricated by HPK, the electric field of which is estimated from the waveforms under illumination of infra-red laser beams. The results show good agreement between experiment and simulation.

Primary authors

Haobo Wang Suyu Xiao (Chinese Academy of Sciences (CN))

Co-author

Xin Shi (Institute of High Energy, CAS)

Presentation materials