Jozef Stefan Institute (SI)
Author in the following contributions
- Radiation damage investigation of epitaxial p-type silicon using DLTS and TAS measurements of Schottky and pn-junction diodes
- GaN/AlGaN high electron mobility transistor characteristics after 1016 neq/cm2 neutron irradiation
- Update on Radiation damage investigation of epitaxial P-type Silicon using Schottky diodes
- Timing properties of the RD50-MPW2 HVCMOS chip
- High temperature annealing of irradiated LGADs
