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09:00
Welcome
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Michael Moll
(CERN)
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09:10
Non-Ionizing Energy Loss: Geant4 simulations and OPTICS clustering towards more advanced NIEL concept for radiation damage modelling and prediction
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Vendula Subert
(Hamburg University (DE))
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09:30
Radiation damage investigation of epitaxial p-type silicon using DLTS and TAS measurements of Schottky and pn-junction diodes
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Christoph Thomas Klein
(Carleton University (CA))
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09:50
Update on Radiation damage investigation of epitaxial P-type Silicon using Schottky diodes
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Matthew Glenn Kurth
(Institute of High Energy Physics (CN))
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10:10
The A_Si-Si_i-defect - a possible candidate to explain acceptor removal in LGADs
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Kevin Lauer
(CiS Institut fuer Mikrosensorik GmbH (DE) / TU Ilmenau (DE))
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11:00
Investigation of high resistivity p-type FZ silicon diodes after 60Co - gamma irradiation
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Chuan Liao
(Hamburg University (DE))
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11:20
Defect characterization studies on gamma-irradiated p-type Si diodes
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Anja Himmerlich
(CERN)
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11:40
On the bistability of the Boron related donor associated with the acceptor removal process in irradiated p-type silicon
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Andrei Nitescu
(National Institute of Material Physics -NIMP)
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12:00
RD50 Project proposal: Defect engineering in PAD diodes mimicking the gain layer in LGADs
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Ioana Pintilie
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12:20
Discussion: Defects and Material Characterization
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Ioana Pintilie
Michael Moll
(CERN)