The ATLAS upgrade for HL-LHC includes the installation of an entirely new all-silicon Inner Tracker (ITk). The part of the tracker further away from the IP is instrumented with silicon micro-strip sensors comprising 165m2 of active area in a nearly hermetic way. Multiple sensor shapes are utilized: square sensors in the barrel part and a stereo-annulus sensor design with curved edges to...
In this work, charge collection profiles of non-irradiated and irradiated $150 \; \mu \text{m}$ $p$-type pad diodes were measured using a $5.2 \; \text{GeV}$ electron beam traversing the diode parallel to the readout electrode. Four diodes were irradiated to $1 \; \text{MeV}$ neutron equivalent fluences of 2, 4, 8, and $12 \times 10^{16} \; \text{cm}^{-2}$ with $23 \; \text{MeV}$ protons. By...
In the following years, the LHC is going to be upgraded to the so called High Luminosity LHC (HL-LHC). Therefore, the CMS (Compact Muon Solenoid) detector will be adapted to the new conditions by incorporating new silicon sensors into the tracker and the calorimeter endcap. The strategy to monitor the quality and stability of the sensor production process is based on a test structure set,...
An effective approach for evaluating the scenario of Si sensor radiation degradation requires parametrization of the bulk current generation and the electric field transformation in the irradiated sensors. The presented data show that the I-V characteristics of Si sensors damaged by short-range particles allow a reliable differentiating between these processes and defining the parameters of...
Dear Colleagues,
Radiation sensors and detectors are widely used in fundamental physics, nuclear reactors, aerospace science, medicine, environmental monitoring, etc. One of the most important aspects of these application areas is the extremely harsh radiation environment, driven by the next-generation fusion energy reactors and future high-energy particle detectors. It is crucial to...
1 Vilnius University (LT)
2 Byelorussian State University (BY)
Corresponding author : algirdas.mekys@ff.vu.lt
Abstract: The radiation induced defects in silicon changes charge carrier transport properties, which are investigated by Hall and magnetoresistivity measurement techniques. The study concentrates on p-type Si material showing recent interest in BiOi defect formation. The...
To study the charge collection efficiency of radiation-damaged silicon
sensors, frequently red and near-infrared light is used to generate
electron-hole pairs . In order to determine the absolute number of
produced charge carriers, the light absorption coefficient, $\alpha$,
has to be known.
To study the change of $\alpha$ due to radiation-induced defects, we
have measured the...
Recently, semiconductive polymeric materials have attracted attention as an active layer for the detection of ionizing radiation because of their excellent properties such as flexibility, easy production, solution processability and low-cost production. This paper presents X-ray detection properties of Poly(3-hexylthiophene) (P3HT) : Phenyl C61 butyric acid methyl ester (PCBM) blend structure...