The 40th RD50 Workshop (CERN)

Session

Wide Band Gap Materials

Jun 22, 2022, 9:00 AM

6/2-024 - BE Auditorium Meyrin (CERN)

48. GaN/AlGaN high electron mobility transistor characteristics after 1016 neq/cm2 neutron irradiation

Dr Jean-Paul Noel (National Research Council Canada)

6/22/22, 9:00 AM

Gallium nitride (GaN) and its related hetero-structure alloy AlGaN are wide band gap semiconductors which offer radiation-hard alternatives to silicon, particularly as the focus in the HEP community shifts toward technologies capable of operating in extremely high radiation fields such as fast hadron fluence greater than 1017 neq/cm2. High-electron mobility transistors (HEMTs) fabricated in...

42. Study of the spectrometric performance of SiC detectors at high temperature

Dr Maria Del Carmen Jimenez Ramos (Universidad de Sevilla (ES))

6/22/22, 9:20 AM

In future nuclear fusion reactors, it will be essential to diagnose suprathermal ions escaping from the plasma. The escaping suprathermal ions imply a loss of energy that leads to plasma cooling, in addition to compromising the integrity of the reactor wall material [1]. For the future ITER (International Thermonuclear Experimental Reactor) project, it will be of crucial importance to detect...

41. Caracterization of neutron irradiated IMB-CNM SiC planar diodes with TPA-TCT

Cristian Quintana San Emeterio (Universidad de Cantabria and CSIC (ES))

6/22/22, 9:40 AM

A radiation tolerance study of planar diodes fabricated on a SiC substrate will be presented. TPA-TCT was used to characterize the samples. The measurement campaign was carried out at the laser facility of the EHU-UPV university.

35. Impact of annealing on Ti/4H-SiC Schottky barrier diode radiation detector performance for fusion alpha-particle diagnostics.

Mrs Shilpa Aluru (Indian Institute of Technology Tirupati)

6/22/22, 10:00 AM

Advanced fusion alpha-particle diagnostics in high D-T plasmas under high-fluences require efficient wide bandgap semiconductor detectors fabricated on 4H-SiC and Diamond materials. However, acquiring high-pure single crystalline diamond is difficult to fabricate large area detectors. This motivated to explore wide bandgap semiconductor 4H-SiC possessing high thermal conductivity suitable for...

23. Measurements and Simulations of High Rate 4H-SiC Particle Detectors

Andreas Gsponer (Austrian Academy of Sciences (AT))

6/22/22, 10:50 AM

Compared to Silicon (Si), silicon carbide (SiC) has multiple advantageous material properties, making it an interesting candidate for high beam rate detectors. SiC features a higher charge carrier saturation velocity and breakdown voltage than Si, which allows for a high time resolution and aids in mitigating pile-ups. The large band gap of SiC improves its radiation hardness, which, together...

13. Development of 4H-SiC Low Gain Avalanche Diode

Tao Yang (Chinese Academy of Sciences (CN))

6/22/22, 11:10 AM

Inspired by the Low Gain Avalanche Diode (LGAD) of Silicon, we investigate the possibilities to produce similar device using 4H-SiC, benefiting from the intrinsic characteristics of the wide band gap properties of Silicon Carbide, such as higher saturated carrier velocity, higher atom displacement energy as well as the recent technological improvement of high-quality epitaxy with high...

12. SiC Neutron Irradiaion Study at CSNS

Rui Fan (Institute of High Energy Physics, CAS)

6/22/22, 11:30 AM

The irradiation effect of Schottky 4H-SiC detector has been studied at the Back-n white neutron beamline at China Spallation Neutron Source (CSNS). The total irradiation flux of the white neutron with an energy peak of 1 MeV, is about 1e14n/cm2.Before and after irradiation, the alpha particle energy spectrums are compared, and the influence of neutron irradiation on the polarization effect of...

11. Deveopment of 3D SiC radiation detector

Prof. Hongwei Liang (Dalian University of Technology)

6/22/22, 11:50 AM

A prototype of 360 um thick single crystal SiC has been fabricated with holes of 100um using laser drilling method. Form scanning electron microscope (SEM) images, there is no crack extending to the single crystal, and no residue on the side wall. It is found that the SiC sidewall is carbon-riched after laser and chemical treatment. The electrodes of 3D 4H-SiC device are formed by extruding...

52. Discussion: Wide Band Gap Materials

Dr Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES)), Giulio Pellegrini (Universidad de Valencia (ES))

6/22/22, 12:10 PM