Speaker
Tomas Ceponis
(nstitute of Photonics and Nanotechnology, Vilnius University)
Description
The particle beam profilers, based on fluence measurements performed by recording the changes of carrier lifetime in Si material and scintillation intensity of thin GaN layers, caused by radiation induced defects and emission centres, will be presented. The beams of penetrative (26 GeV/c) and stopped (1.6 MeV) protons will be discussed.
Author
Tomas Ceponis
(nstitute of Photonics and Nanotechnology, Vilnius University)
