The 40th RD50 Workshop (CERN)

Session

Defect and Material Characterization

21 Jun 2022, 09:00

6/2-024 - BE Auditorium Meyrin (CERN)

58. Welcome

Michael Moll (CERN)

21/06/2022, 09:00

47. Non-Ionizing Energy Loss: Geant4 simulations and OPTICS clustering towards more advanced NIEL concept for radiation damage modelling and prediction

Vendula Subert (Hamburg University (DE))

21/06/2022, 09:10

The Non Ionizing Energy Loss (NIEL) concept compares and scales the damage impacted on semiconductor devices in different radiation fields. A particular weakness of the present NIEL concept consists in the inability to predict the different formation rates of cluster and point defects in the silicon (Si) crystal for different particles and particle energies. Specifically, differences between...

30. Radiation damage investigation of epitaxial p-type silicon using DLTS and TAS measurements of Schottky and pn-junction diodes

Christoph Thomas Klein (Carleton University (CA))

21/06/2022, 09:30

This project focuses on the investigation of trap energy levels introduced by radiation damage in epitaxial p-type silicon. Using 6-inch wafers of various boron doping concentrations (1e13, 1e14, 1e15, 1e16, and 1e17 cm-3) with a 50 µm epitaxial layer, multiple iterations of test structures consisting of Schottky and pn-junction diodes of different sizes and flavours are being fabricated at...

25. Update on Radiation damage investigation of epitaxial P-type Silicon using Schottky diodes

Dr Matthew Glenn Kurth (Institute of High Energy Physics (CN))

21/06/2022, 09:50

This project focuses on the investigation of radiation damage of epitaxial P-type silicon.

Various test structures consisting of Schottky diodes and p junctions of different sizes and flavors have been fabricated at different facilities, including RAL and Carleton University.

The structures are fabricated on 6 inch wafers of various doping (1e13, 1e14, 1e15, 1e16, and 1e17 B cm-3) and 50...

37. The A_Si-Si_i-defect - a possible candidate to explain acceptor removal in LGADs

Dr Kevin Lauer (CiS Institut fuer Mikrosensorik GmbH (DE) / TU Ilmenau (DE))

21/06/2022, 10:10

Experimental evidence for the explanation of light-induced degradation (LID) in silicon by the A_Si-Si_i-defect is summarized [1, 2]. Based on these findings, a possible involvement of the B_Si-Si_i-defect in the acceptor removal phenomenon of low-gain avalanche detectors (LGAD) [3] with a boron-doped gain layer is discussed. An outlook on density functional theory (DFT) based calculations of...

21. Investigation of high resistivity p-type FZ silicon diodes after 60Co - gamma irradiation

Mr Chuan Liao (Hamburg University (DE))

21/06/2022, 11:00

In this work, the macroscopic (I-V, C-V) and microscopic (Thermally Stimulated Current(TSC) and Capacitance(TS-Cap)) measurements were used to investigate the properties of high resistivity p-type diodes irradiated with 60Co gamma-rays with dose values of 10, 20, 100 and 200 Mrad. Two types of diodes are manufactured using p-stop and p-spray to isolate pad and guard ring, and both are FZ...

32. Defect characterization studies on gamma-irradiated p-type Si diodes

Anja Himmerlich (CERN)

21/06/2022, 11:20

Boron-doped silicon devices used in high radiation environment like the HL-LHC show a degradation in device performance due to the radiation induced deactivation of the active boron dopant. This effect is known as the so-called Acceptor Removal Effect and depends on particle type, energy and radiation dose. Here we present defect characterization studies using TSC (thermally stimulated current...

34. On the bistability of the Boron related donor associated with the acceptor removal process in irradiated p-type silicon

Andrei Nitescu (National Institute of Material Physics -NIMP)

21/06/2022, 11:40

Silicon based sensors suffer from a phenomenon called “Acceptor removal” when exposed to high fluences of radiation. This “acceptor removal” process implies the elimination of the dopant element from the substitutional place (e.g., boron for p-type silicon) and combining with a different particle, obtaining an electrical active defect complex (in the case of boron-doped p-type silicon,...

33. RD50 Project proposal: Defect engineering in PAD diodes mimicking the gain layer in LGADs

Ioana Pintilie

21/06/2022, 12:00

The proposed project is focusing on the acceptor removal process (ARP) in the irradiated gain layer of LGAD sensors, aiming to understand it and parametrize it for various content of B, C and O impurities and irradiation fluences, in order to find proper defect engineering solutions to maximize the radiation hardness of the gain layers. The studies performed so far on LGAds show that in the...

59. Discussion: Defects and Material Characterization

Ioana Pintilie, Michael Moll (CERN)

21/06/2022, 12:20

2. M-center in low-energy electron irradiated n-type 4H-SiC

ivana capan

In this work, we present a study on the low-energy electron irradiated 4H-SiC material studied by means of deep-level transient spectroscopy (DLTS) and Laplace-DLTS. Electron irradiation has introduced the following deep level defects: EH1 and EH3 previously assigned to carbon interstitial-related defects, and M-center, a metastable defect also recently assigned to carbon interstitial defects....