The Non Ionizing Energy Loss (NIEL) concept compares and scales the damage impacted on semiconductor devices in different radiation fields. A particular weakness of the present NIEL concept consists in the inability to predict the different formation rates of cluster and point defects in the silicon (Si) crystal for different particles and particle energies. Specifically, differences between...
This project focuses on the investigation of trap energy levels introduced by radiation damage in epitaxial p-type silicon. Using 6-inch wafers of various boron doping concentrations (1e13, 1e14, 1e15, 1e16, and 1e17 cm-3) with a 50 µm epitaxial layer, multiple iterations of test structures consisting of Schottky and pn-junction diodes of different sizes and flavours are being fabricated at...
This project focuses on the investigation of radiation damage of epitaxial P-type silicon.
Various test structures consisting of Schottky diodes and p junctions of different sizes and flavors have been fabricated at different facilities, including RAL and Carleton University.
The structures are fabricated on 6 inch wafers of various doping (1e13, 1e14, 1e15, 1e16, and 1e17 B cm-3) and 50...
Experimental evidence for the explanation of light-induced degradation (LID) in silicon by the A_Si-Si_i-defect is summarized [1, 2]. Based on these findings, a possible involvement of the B_Si-Si_i-defect in the acceptor removal phenomenon of low-gain avalanche detectors (LGAD) [3] with a boron-doped gain layer is discussed. An outlook on density functional theory (DFT) based calculations of...
In this work, the macroscopic (I-V, C-V) and microscopic (Thermally Stimulated Current(TSC) and Capacitance(TS-Cap)) measurements were used to investigate the properties of high resistivity p-type diodes irradiated with 60Co gamma-rays with dose values of 10, 20, 100 and 200 Mrad. Two types of diodes are manufactured using p-stop and p-spray to isolate pad and guard ring, and both are FZ...
Silicon based sensors suffer from a phenomenon called “Acceptor removal” when exposed to high fluences of radiation. This “acceptor removal” process implies the elimination of the dopant element from the substitutional place (e.g., boron for p-type silicon) and combining with a different particle, obtaining an electrical active defect complex (in the case of boron-doped p-type silicon,...
