Gallium nitride (GaN) and its related hetero-structure alloy AlGaN are wide band gap semiconductors which offer radiation-hard alternatives to silicon, particularly as the focus in the HEP community shifts toward technologies capable of operating in extremely high radiation fields such as fast hadron fluence greater than 1017 neq/cm2. High-electron mobility transistors (HEMTs) fabricated in...
In future nuclear fusion reactors, it will be essential to diagnose suprathermal ions escaping from the plasma. The escaping suprathermal ions imply a loss of energy that leads to plasma cooling, in addition to compromising the integrity of the reactor wall material [1]. For the future ITER (International Thermonuclear Experimental Reactor) project, it will be of crucial importance to detect...
A radiation tolerance study of planar diodes fabricated on a SiC substrate will be presented. TPA-TCT was used to characterize the samples. The measurement campaign was carried out at the laser facility of the EHU-UPV university.
Advanced fusion alpha-particle diagnostics in high D-T plasmas under high-fluences require efficient wide bandgap semiconductor detectors fabricated on 4H-SiC and Diamond materials. However, acquiring high-pure single crystalline diamond is difficult to fabricate large area detectors. This motivated to explore wide bandgap semiconductor 4H-SiC possessing high thermal conductivity suitable for...
Compared to Silicon (Si), silicon carbide (SiC) has multiple advantageous material properties, making it an interesting candidate for high beam rate detectors. SiC features a higher charge carrier saturation velocity and breakdown voltage than Si, which allows for a high time resolution and aids in mitigating pile-ups. The large band gap of SiC improves its radiation hardness, which, together...
Inspired by the Low Gain Avalanche Diode (LGAD) of Silicon, we investigate the possibilities to produce similar device using 4H-SiC, benefiting from the intrinsic characteristics of the wide band gap properties of Silicon Carbide, such as higher saturated carrier velocity, higher atom displacement energy as well as the recent technological improvement of high-quality epitaxy with high...
The irradiation effect of Schottky 4H-SiC detector has been studied at the Back-n white neutron beamline at China Spallation Neutron Source (CSNS). The total irradiation flux of the white neutron with an energy peak of 1 MeV, is about 1e14n/cm2.Before and after irradiation, the alpha particle energy spectrums are compared, and the influence of neutron irradiation on the polarization effect of...
A prototype of 360 um thick single crystal SiC has been fabricated with holes of 100um using laser drilling method. Form scanning electron microscope (SEM) images, there is no crack extending to the single crystal, and no residue on the side wall. It is found that the SiC sidewall is carbon-riched after laser and chemical treatment. The electrodes of 3D 4H-SiC device are formed by extruding...
