Speaker
Dr
Ivan Vila Alvarez
(Instituto de Física de Cantabria (CSIC-UC))
Description
We report on the study of the radiation tolerance of silicon carbide (SiC) pn planar diodes manufactured at IMB-CNM. Dedicated TPA-TCT and TRIBIC measurement campaigns, carried out at the UPV-EHU and CNA femto laser and ion microbeam facilities respectively, were used to characterise the response of the diodes. The studied devices were irradiated with neutrons up to a fluence of $1\times10^{15} n_{eq}/cm^2$. The charge collection efficiency and the depletion region were studied as a function of fluence. We observed evidence for a possible radiation-induced polarisation of the SiC substrate, with a strong recovery of charge collection efficiency and depletion width when the irradiated diodes are forward biased.
Primary authors
Carmen JIMENEZ RAMOS
Cristian Quintana San Emeterio
(Universidad de Cantabria and CSIC (ES))
Efren Navarrete Ramos
(Universidad de Cantabria and CSIC (ES))
Francisco Rogelio Palomo Pinto
(Universidad de Sevilla (ES))
Dr
Gemma Rius
(Institute of Microelectronics of Barcelona IMB-CNM-CSIC)
Dr
Giulio Pellegrini
(Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))
Ivan Lopez Paz
(The Barcelona Institute of Science and Technology (BIST) (ES))
Dr
Ivan Vila Alvarez
(Instituto de Física de Cantabria (CSIC-UC))
Javier Garcia Lopez
(University of Seville)
Dr
Joan Marc Rafí
(Consejo Superior de Investigaciones Cientificas (CSIC) (ES))
Marcos Fernandez Garcia
(Universidad de Cantabria and CSIC (ES))
Michael Moll
(CERN)
Moritz Wiehe
(CERN)
Raul Montero
Richard Jaramillo Echeverria
(Universidad de Cantabria and CSIC (ES))
Sebastian Pape
(Technische Universitaet Dortmund (DE))
