Speakers
Dr
Wang Congcong
(Institute of High Energy Physics of Chinese Academy of Sciences)Mr
Xin Shi
(Institute of High Energy Physics of Chinese Academy of Sciences)
Description
Silicon carbide (SiC) has wider bandgap, higher atomic displacement energy, saturated electron drift velocity and thermal conductivity. It has the potential to become a high time resolution detector resistant to radiation and high temperature. A 4H-SiC Low-Gain Avalanche Detector (LGAD) epitaxial structure has been designed and epitaxial growth. The epitaxial structure of 4H-SiC LGAD was P++/N+ gain/N−bulk/N buffer/N++ substrate. In this work, the 4H-SiC LGAD fast time detector (Detector name: SICAR1) was successfully fabricated through the process of photolithography, etching, magnetron sputtering and annealing. The electronic properties of operating voltage, barrier height, effective doping and dark current were analyzed.
Authors
Dr
Wang Congcong
(Institute of High Energy Physics of Chinese Academy of Sciences)
Mr
Xin Shi
(Institute of High Energy Physics of Chinese Academy of Sciences)
Co-authors
Ms
Keqi Wang
(Liaoning university)
Ms
Xiyuan Zhang
(Institute of High Energy Physics of Chinese Academy of Sciences)
Mr
Ye He
(Nanjing University)
