Speaker
Gregor Kramberger
(Jozef Stefan Institute)
Description
The TCT was exploited in a new way for measuring de-trapping times in irradiated silicon detectors. The method is based on measurements of the collected charge as a function of integration time on time scale much longer than drift times, which required acquisition of current waveforms on the time scale of few micro-seconds. The analysis of the data and first results will be presented. The preliminary measurements with irradiated n-type MCz diodes revealed that de-trapping times of holes are of order few micro-seconds and much shorter than those of electrons. The temperature dependence of de-trapping times can be exploited for estimation of energy levels responsible for trapping.
Author
Gregor Kramberger
(Jozef Stefan Institute)
Co-authors
Igor Mandić
(Jožef Stefan Institute)
Marko Mikuž
(Jožef Stefan Institute)
Marko Milovanović
(Jožef Stefan Institute)
Marko Zavrtanik
(Jožef Stefan Institute)
