Speaker
Description
New radiation hard materials are investigated for future high energy particle physics experiments. Silicon carbide is one of the materials currently considered, due to it's interesting properties, e.g. a larger bandgap and a higher breakdown field compared to silicon. The larger bandgap leads to low leakage currents even after high fluences of irradiation, allowing for non-cooled operation.
This study focuses on investigating intrinsic and radiation-induced defects in n-type 4H-SiC devices by subjecting them to 23$\,$GeV protons at various fluences. The sensors studied were manufactured by IMB-CNM, with a 5$\,$µm or 50$\,$µm thick epitaxial layer on top of a 350$\,$µm thick 4H-SiC substrate. The samples were irradiated at IRRAD to 1E+11, 1E+12, 1E+13, 1E+14 and 1E+15$\,$p/cm$^2$. TSC and DLTS measurements were performed in the temperature range of 20$\,$K to 350$\,$K. The presented results include IV and CV measurements taken before and after irradiation, as well as the defect parameters obtained from TSC and DLTS measurements.
