Monolithic active pixel sensors featuring depleted substrates (DMAPS) present a promising alternative for pixel tracker detectors operating in high-radiation and high-rate environments. The utilization of high-resistivity silicon substrates and high-voltage capabilities within commercial CMOS technologies holds the potential to significantly enhance radiation tolerance with respect to MAPS....
The CERN RD50 collaboration develops depleted monolithic active pixel CMOS sensors for future colliders with the aim of high radiation tolerance, good time resolution, and high granularity pixel detectors. We will show that one prototype in 150 nm high voltage CMOS from LFoundry, the RD50-MPW2, featuring 64 active pixels of 60 μm pitch has a time resolution of 220 ps for an injected charge of...
The RD50-MPW3 is a HV-CMOS sensor developed by the HV-CMOS working group manufactured in the LFoundry 150nm process.
In this talk, I will present the most recent testbeam results.
Following up on the results of the test beam in 2022 at the CERN-SPS facility, presented in earlier workshops, this talk focuses on the successful test beam campaign at DESY in Jul. 2023.
I will highlight the...
The PSI HEP group has designed and produced test devices of DMAPS in two different technologies: Motic in LF 110 and TSI-R4S in TSI 180. The talk reports on the status of these projects including results from test beam campaigns at DESY.
Single and four-quadrant (4Q) photodiodes are very common beam intensity and position diagnostic devices for hard X-ray synchrotron beamlines, and they are also of interest for real time monitoring and dosimetry in particle therapy medical applications. Ultrathin Si devices are advantageous in terms of cost and sensing area compared to diamond standard. X-ray beam position monitors, are to be...
Silicon carbide (SiC) is a wide bandgap semiconductor with physical properties that make it especially appropriate for radiation monitoring in radiation-harsh environments and for elevated temperature operation. In this work, the radiation effects in electron, neutron and proton irradiated 4H-SiC pn junction diodes have been investigated by means of electrical characterization in both, reverse...
New radiation hard materials are investigated for future high energy particle physics experiments. Silicon carbide is one of the materials currently considered, due to it's interesting properties, e.g. a larger bandgap and a higher breakdown field compared to silicon. The larger bandgap leads to low leakage currents even after high fluences of irradiation, allowing for non-cooled...
Silicon carbide (SiC) has several advantageous material properties, making it an appealing detector material: its high charge carrier saturation velocity and breakdown voltage allow for an intrinsically higher time resolution than for silicon (Si). The larger bandgap suppresses dark current, even for highly irradiated material, reducing power consumption and thus omitting the need for...
Silicon carbide (SiC) has potential to be used for fast particle detection in radiation environment because of its wider band gap and high electron mobility. To improve the SiC PIN detection for small signal generated by minimum ionizing particles (MIPs), a 4H-SiC Low Gain Avalanche Diode has been proposed – SICAR. The first version (SICAR1) has been fabricated with initial electrical test...
Silicon Microstrips (STRIP) detectors were evaluated after 1MeV neutron irradiation in the fluence range from 1E+15 to 1E+17 /cm2. Photoconductivity spectral measurements were performed in range from 0.45 eV to 3.5 eV of excitation energy with different applied electric potential. The spectral shape variation with the applied electric potential raised the idea of the model with changing...
Radiation damage significantly impacts the performance of silicon tracking detectors in Large Hadron Collider (LHC) experiments such as ATLAS and CMS, with signal reduction being the most critical effect. While adjusting sensor bias voltage and detection thresholds can help mitigate these effects, generating simulated data that accurately mirrors the performance evolution with the accumulation...
The proven radiation hardness of silicon 3D devices up to fluences of $1 \times 10^{17}\,n_{eq}/cm^{2}$ makes them an excellent choice for next generation trackers, providing $<10\,\mu m$ position resolution at a high multiplicity environment. The anticipated pile-up increase at HL-LHC conditions and beyond, requires the addition of < 50 ps per hit timing information to successfully resolve...
Silicon pixel sensors manufactured using commercial CMOS processes are promising instruments for high-energy particle physics experiments due to their high yield and proven radiation hardness. As one of the essential factors for the operation of detectors, the breakdown performance of pixel sensors constitutes the upper limit of the operating voltage.
In the first part, we present a...
We present TCAD simulations on the gain suppression in LGAD sensors as measured with TPA-TCT.
The Two Photon Absorption – Transient Current Technique (TPA-TCT) is a tool for the characterisation of particle detectors. Contrary to present state of the art TCT, TPA-TCT enables characterisation measurements with three dimensional spatial resolution. A tabletop setup for the investigation of silicon based detectors was commissioned at CERN to pioneer the technique. A 430 fs pulse fiber...
Extensive studies of effects of annealing at 60C on charge collection efficiency were made with miniature n in p type silicon strip detectors during development and production of sensors for ATLAS ITk strip detector. Measurements were made with Alibava system with electrons from Sr90 source with detectors irradiated with reactor neutrons and low energy protons. At not too high bias voltages...
This project focuses on the investigation of trap energy levels introduced by radiation damage in epitaxial p-type silicon. Using 6-inch wafers of various boron doping concentrations (1e13, 1e14, 1e15, 1e16, and 1e17 cm−3) with a 50 µm epitaxial layer, multiple iterations of test structures consisting of Schottky and pn-junction diodes of different sizes and flavours are being fabricated at...
The High-Luminosity LHC will challenge the detectors with a nearly 10-fold increase in integrated luminosity compared to the previous LHC runs combined, thus the CMS detector will be upgraded to face the higher levels of radiation and the larger amounts of data collected. The High-Granularity Calorimeter (HGCAL) will replace the current endcap calorimeters of the CMS detector. It will...
The ATLAS ITk Strip detector is a planned tracker upgrade for the High-Luminosity LHC which utilizes n$^+$-in-p silicon sensors fabricated by Hamamatsu Photonics with 300 $\mu$m signal-generation thickness and approximately 75 $\mu$m strip pitch. Measurements and simulations are presented for silicon strip sensors and test devices, including after irradiation to fluences up to 1.4*10$^{15}$...
A significant challenge in producing the larger structures typical for silicon strip sensors is the limited reticle size of the CMOS process. This problem can be solved through the so called stitching of the reticles.
The sensors that are the subject of this talk are passive CMOS strip sensors, containing three different strip variants, designed by the University of Bonn. They were produced...
Wide-bandgap semiconductors such as gallium nitride (GaN) have inherent advantages based on their material properties such as high critical field, high electron mobility and most importantly, high bond energies that lead to lower displacement damage, all of which imply a high radiation hardness. This material system should therefore be considered as an alternative to silicon-based detectors...
In this contribution we present an update about the development of Monolithic Active Pixel Sensors (MAPS) at INFN in the framework of the ARCADIA project. Thanks to the first two engineering runs, manufactured in 2020 and 2021 with a 110 nm CMOS process, the device concept has been well assessed and tested, both through extensive laboratory characterizations and the comparison between...
The Low Gain Avalanche Detector (LGAD) technology is proposed for the ATLAS High Granularity Timing Detector (HGTD) towards the High-Luminosity Large Hadron Collider (HL-LHC). USTC-IME LGADs are designed by the University of Science and Technology of China (USTC) and fabricated by the Institute of Microelectronics of Chinese Academy of Science (IME, CAS). The prototypes of the USTC-ME LGAD are...
In this contribution we will present measurements on LGADs corresponding to our CNM’s second production run based on 6-inch, 50µm active layer thick, Si-Si wafers (6LG2-v2 technology). The wafers were carbon enriched using five different implantation doses and one implantation energy. For the gain layer, samples were fabricated using a single boron implantation dose and energy. Measurements...
The EXFLU1 batch of LGAD sensors on substrates of thickness between 15 and 45 $\mu$m were exposed to various radiation grades between 1 $\times$ 10$^{-14}$ and 5 $\times$ 10$^{-15}$ n$_{\mathrm{eq}}$cm$^{-2}$ using the neutron reactor at JSI. The sensor designs themselves, manufactured at FBK, are optimised to preserve characteristics at high fluences. The latest studies of the effects of...
This contribution presents the first study of the spatial resolution of an array of RSD2 450 um pitch pixels. The results have been obtained in the latest test beam at the DESY 6 GeV/c electron line.
The readout board is based on the FAST2 ASIC, a 16-channel fast amplifier chip developed in Torino.
The results demonstrate that resistive readout yields a spatial resolution smaller than 5% of...
The LGAD technology is of great interest for high-energy physics (HEPs) as a 4-D tracking device and has been qualified for use in the timing detectors of the CMS and ATLAS experiments for the high luminosity upgrade of the LHC (HL-LHC). During the operation in strong radiation fields, the radiation damage progressively leads to performance degradation of LGADs, which therefore need a more...
AC-LGAD (AC coupled Low-Gain Avalanche Detector) sensors have emerged as a highly promising technology for precision particle detection in collider experiments. These sensors offer exceptional capabilities, delivering remarkable time and spatial resolutions on the order of tens of micrometers and picoseconds, all while achieving a 100% fill factor. We present results obtained with AC-LGAD...
The Trench Isolated LGAD (TI-LGAD) technology offers a promising solution to LGAD's fill factor limitations, enabling small segmentation of fast timing silicon sensors for collider experiments. Previous laboratory studies with this technology have already shown similar timing performance and radiation hardness as for the LGAD technology, with a drastic improvement of the fill factor (reduction...
Authors: Kevin Lauer1,2, Aaron Flötotto2, Katharina Peh2, Robin Müller2, Wichard Beenken2, Erich Runge2, Dirk Schulze2, Stefan Krischok2, Thomas Ortlepp1
Affiliations: 1 CiS Forschungsinstitut für Mikrosensorik GmbH, Erfurt, Germany
2 TU Ilmenau, Institut für Physik and Institut für Mikro- und Nanotechnologien, Ilmenau, Germany
Abstract: Defects in silicon are known to occur in numerous...
HPK has produced LGADs where boron was not fully activated after the implantation. This was an attempt to reduce acceptor removal in the gain layer by formation of defect complexes of non-activated interstitial boron atoms with radiation induced interstitial silicon atoms and other impurities. In this was the replacement of activated boron by interstitial silicon in the lattice position would...
In this presentation, we continue our investigation of charge-space profiles in segmented LGADs with a focus on double-trenched LGADs (2Tr LGAD). We compare the signal behavior of the Ti-LGAD sample with double trenches in the interpad ( IP) region to that of LGADs with 2p-stops and bias rings used as isolation structures (both types produced in the Ti-LGAD RD50 batch with difference that...
We present the continuation of our research on IP signals in Ti-LGAD (Wafer 11). Our experimental examination on Ti-LGAD, from the wafer 11, revealed exceptionally high signals within the IP region, which was significantly higher than the signals measured in previously conducted experiments [1] on the segmented LGAD sample with two p-stops and a bias ring in the center of the IP region with...
We propose a novel methodology to measure the electric field of LGAD. This method introduces the estimation of the elongation of the carrier cluster caused by diffusion and the divergence of the electric field force during its drift along the detector. The maximum of time derivative tested from edge-TCT is extracted to quantify the dispersion of the light-induced carriers. Both RASER...
The Single Event Burnout (SEB) was observed for the first time in 50µm-thick LGAD, and studied by ATLAS and CMS collaborations during the R&D activity on LGAD sensors for their respective timing detector.
The experimental results observed on particle beam showed that, in 50µm-thick silicon sensors, the SEB occurs at bulk electric fields of 11.5-12 V/µm.
In this contribution, we report SEB...
LGAD sensors with a carbon-enriched multiplication layer are the state-of-the-art in terms of radiation resistance, concerning this specific sensor technology. The presence of carbon allows LGADs to operate, while maintaining unchanged temporal resolution, even after irradiation fluences of 1-2x10^15 neq/cm^2.
Carbonated LGADs have been successfully produced by FBK, CNM and IHEP-IEM. FBK,...
The High Luminosity Large Hadron Collider upgrade will increase the luminosity of the LHC by a factor of 10. Low gain avalanche detectors (LGADs) promise excellent timing resolution, which can mitigate the pileup associated with high luminosity. The most highly irradiated LGADs will be subject to 2.5 × 10^15neq /cm2 of hadron fluence during Run 4; their timing performance must tolerate this....
Low Gain Avalanche Diodes (LGADs) represent the state-of-art technology in fast timing measurement for charged minimum ionizing particles (MIPs). LGADs are initially developed for future Timing Detectors in the ATLAS and CMS experiments at the High-Luminosity LHC. One of LGADs’ key features is the gradient-doped multiplication layer providing intrinsic gain. The intrinsic gain enables the...
PIONEER is a next-generation experiment proposed at the Paul Scherrer Institute to perform high precision measurements of rare pion decays. By improving the precision by an order of magnitude on the charged-pion branching ratio to electrons vs. muons and the pion beta decay, PIONEER will provide a pristine test of Lepton Flavour Universality and the Cabbibo angle anomaly. At the centre of the...
Devices with internal gain, such as Low Gain Avalanche Diodes (LGADs) can have O(30) ps timing resolution. They play a crucial role in High Energy Physics (HEP) experiments. Similarly, resistive silicon devices, such as AC-coupled LGADs (AC-LGADs) sensors, achieve a fine spatial resolution while maintaining the LGAD’s timing resolution. Devices of both types, with varying gain-layer width and...
We present the results of the Radiation Tolerance Study (Electrical and Radioactive Source characterization) performed at the IFCA on Carbonated-Enriched Gain-Layer small devices (single diode) from the Run #15973 production of CNM-IMB.
The MC40 cyclotron at the University of Birmingham is routinely involved with proton irradiations for several detector R&D projects. For the majority of these irradiations, a 27 MeV proton beam is delivered at a current of 200 nA, being able to supply fluences of a few 10$^{15}$ n$_{\text{eq}}$/cm$^{2}$ in one day. The proton energy at the target and the corresponding hardness factor have been...
Beam tests are the standard method for determining the position resolution of detectors. This requires the precise knowledge of the beam-position resolution at the detector to be tested. A method is proposed which achieves this. It uses a segmented silicon detector with normally incident beam. It is found that for normal incidence events with cluster-size 2 have a position accuracy well below...
The proton irradiation site at the Bonn Isochronous Cyclotron is in operation since 2021.
The accelerator typically provides a 14 MeV (~12.5 MeV on DUT) proton beam with a few mm width and currents of 1 $\mu$A and to the site.
DUTs are irradiated in a cooling box at < -20 °C, mounted on a XY-motorstage, which is moved row-wise through the beam on a grid-like pattern.
Dedicated diagnostics...
We present the first detectors and Single Event Effects experiments in the new Hispanos neutron facility, located at the National Centre of Accelerators, Sevilla, Spain. The detector experiment tests commercial photodiodes, with special emphasis in how to avoid electromagnetic interference. The SEE experiment starts to characterize vulnerabilities of a Intel MAX10 FPGA under fast neutrons....
