Speaker
Description
The CERN RD50 collaboration develops depleted monolithic active pixel CMOS sensors for future colliders with the aim of high radiation tolerance, good time resolution, and high granularity pixel detectors. We will show that one prototype in 150 nm high voltage CMOS from LFoundry, the RD50-MPW2, featuring 64 active pixels of 60 μm pitch has a time resolution of 220 ps for an injected charge of 12 ke-.
Charge in the sensor was generated with laser pulses from the backside (back-TCT), where for each pixel the time of arrival and time over threshold were measured with a fast oscilloscope to evaluate the time resolution of the entire pixel circuit including in-pixel amplification and discrimination. This is compared to the timing performance of the analog circuitry through charge injection. This is the first time this measurement was performed for the entire pixel matrix. With a first two-dimensional in-pixel measurement in the pixel matrix plane, we give insight into the electric field in the sensor.
