Charge carrier mobility evaluation in Silicon Microstrips detectors exploiting photoconductivity phenomena

29 Nov 2023, 11:30
20m
6/2-024 - BE Auditorium Meyrin (CERN)

6/2-024 - BE Auditorium Meyrin

CERN

114
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Speaker

Algirdas Mekys (Vilnius University)

Description

Silicon Microstrips (STRIP) detectors were evaluated after 1MeV neutron irradiation in the fluence range from 1E+15 to 1E+17 /cm2. Photoconductivity spectral measurements were performed in range from 0.45 eV to 3.5 eV of excitation energy with different applied electric potential. The spectral shape variation with the applied electric potential raised the idea of the model with changing quantum efficiency and the presence of the another mobility layer inside the samples. This is the extended research of the samples previously characterized by magnetoresistivity (MR) technique. The proposed model complements and better explains the MR results.

Author

Algirdas Mekys (Vilnius University)

Co-authors

Dr Darius Jurciukonis (Vilnius University) Dr Michael Moll (CERN) Ms Paula Baltaseviciute (Vilnius University) Prof. Juozas Vidmantis Vaitkus (Vilnius University)

Presentation materials