Conveners
SiC
- Thomas Bergauer (Austrian Academy of Sciences (AT))
Single and four-quadrant (4Q) photodiodes are very common beam intensity and position diagnostic devices for hard X-ray synchrotron beamlines, and they are also of interest for real time monitoring and dosimetry in particle therapy medical applications. Ultrathin Si devices are advantageous in terms of cost and sensing area compared to diamond standard. X-ray beam position monitors, are to be...
Silicon carbide (SiC) is a wide bandgap semiconductor with physical properties that make it especially appropriate for radiation monitoring in radiation-harsh environments and for elevated temperature operation. In this work, the radiation effects in electron, neutron and proton irradiated 4H-SiC pn junction diodes have been investigated by means of electrical characterization in both, reverse...
New radiation hard materials are investigated for future high energy particle physics experiments. Silicon carbide is one of the materials currently considered, due to it's interesting properties, e.g. a larger bandgap and a higher breakdown field compared to silicon. The larger bandgap leads to low leakage currents even after high fluences of irradiation, allowing for non-cooled...
Silicon carbide (SiC) has several advantageous material properties, making it an appealing detector material: its high charge carrier saturation velocity and breakdown voltage allow for an intrinsically higher time resolution than for silicon (Si). The larger bandgap suppresses dark current, even for highly irradiated material, reducing power consumption and thus omitting the need for...
Silicon carbide (SiC) has potential to be used for fast particle detection in radiation environment because of its wider band gap and high electron mobility. To improve the SiC PIN detection for small signal generated by minimum ionizing particles (MIPs), a 4H-SiC Low Gain Avalanche Diode has been proposed – SICAR. The first version (SICAR1) has been fabricated with initial electrical test...
