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Last (43rd) RD50 Workshop on Radiation Hard Semiconductor Devices for Very High Luminosity Colliders (CERN)

28 November 2023 to 1 December 2023
CERN
Europe/Zurich timezone

CERN RD50 organization

Session

SiC

29 Nov 2023, 09:00
6/2-024 - BE Auditorium Meyrin (CERN)

6/2-024 - BE Auditorium Meyrin

CERN

114
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Conveners

SiC

  • Thomas Bergauer (Austrian Academy of Sciences (AT))

Presentation materials

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  1. 64. Four-quadrant Si and SiC Photodiodes for Beam Position and Monitor Applications
    Dr Joan Marc Rafí (Instituto de Microelectrónica de Barcelona, CNM-CSIC)
    29/11/2023, 09:00

    Single and four-quadrant (4Q) photodiodes are very common beam intensity and position diagnostic devices for hard X-ray synchrotron beamlines, and they are also of interest for real time monitoring and dosimetry in particle therapy medical applications. Ultrathin Si devices are advantageous in terms of cost and sensing area compared to diamond standard. X-ray beam position monitors, are to be...

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  2. 63. Thermal Annealing of Electron, Neutron and Proton Irradiation Effects on SiC Radiation Detectors
    Dr Joan Marc Rafí (Instituto de Microelectrónica de Barcelona, CNM-CSIC)
    29/11/2023, 09:20

    Silicon carbide (SiC) is a wide bandgap semiconductor with physical properties that make it especially appropriate for radiation monitoring in radiation-harsh environments and for elevated temperature operation. In this work, the radiation effects in electron, neutron and proton irradiated 4H-SiC pn junction diodes have been investigated by means of electrical characterization in both, reverse...

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  3. 70. Defect Spectroscopy on Proton Irradiated 4H Silicon Carbide Devices
    Niels Sorgenfrei (Albert Ludwigs Universitaet Freiburg (DE))
    29/11/2023, 09:40

    New radiation hard materials are investigated for future high energy particle physics experiments. Silicon carbide is one of the materials currently considered, due to it's interesting properties, e.g. a larger bandgap and a higher breakdown field compared to silicon. The larger bandgap leads to low leakage currents even after high fluences of irradiation, allowing for non-cooled...

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  4. 91. TCAD simulation of 4H silicon carbide LGADs
    Philipp Gaggl (Austrian Academy of Sciences (AT))
    29/11/2023, 10:00

    Silicon carbide (SiC) has several advantageous material properties, making it an appealing detector material: its high charge carrier saturation velocity and breakdown voltage allow for an intrinsically higher time resolution than for silicon (Si). The larger bandgap suppresses dark current, even for highly irradiated material, reducing power consumption and thus omitting the need for...

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  5. 79. Charge Collection Study of SiC-LGAD - SICAR1
    Xin Shi (Chinese Academy of Sciences (CN))
    29/11/2023, 10:20

    Silicon carbide (SiC) has potential to be used for fast particle detection in radiation environment because of its wider band gap and high electron mobility. To improve the SiC PIN detection for small signal generated by minimum ionizing particles (MIPs), a 4H-SiC Low Gain Avalanche Diode has been proposed – SICAR. The first version (SICAR1) has been fabricated with initial electrical test...

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  6. 104. Discussion: SiC
    Thomas Bergauer (Austrian Academy of Sciences (AT))
    29/11/2023, 10:40
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