Conveners
Radiation damage general
- Igor Mandic (Jozef Stefan Institute (SI))
Radiation damage general
- Ivan Vila Alvarez (Instituto de Física de Cantabria (CSIC-UC))
Radiation damage general
- Gianluigi Casse (University of Liverpool (GB))
Silicon Microstrips (STRIP) detectors were evaluated after 1MeV neutron irradiation in the fluence range from 1E+15 to 1E+17 /cm2. Photoconductivity spectral measurements were performed in range from 0.45 eV to 3.5 eV of excitation energy with different applied electric potential. The spectral shape variation with the applied electric potential raised the idea of the model with changing...
Radiation damage significantly impacts the performance of silicon tracking detectors in Large Hadron Collider (LHC) experiments such as ATLAS and CMS, with signal reduction being the most critical effect. While adjusting sensor bias voltage and detection thresholds can help mitigate these effects, generating simulated data that accurately mirrors the performance evolution with the accumulation...
The proven radiation hardness of silicon 3D devices up to fluences of $1 \times 10^{17}\,n_{eq}/cm^{2}$ makes them an excellent choice for next generation trackers, providing $<10\,\mu m$ position resolution at a high multiplicity environment. The anticipated pile-up increase at HL-LHC conditions and beyond, requires the addition of < 50 ps per hit timing information to successfully resolve...
Silicon pixel sensors manufactured using commercial CMOS processes are promising instruments for high-energy particle physics experiments due to their high yield and proven radiation hardness. As one of the essential factors for the operation of detectors, the breakdown performance of pixel sensors constitutes the upper limit of the operating voltage.
In the first part, we present a...
We present TCAD simulations on the gain suppression in LGAD sensors as measured with TPA-TCT.
The Two Photon Absorption – Transient Current Technique (TPA-TCT) is a tool for the characterisation of particle detectors. Contrary to present state of the art TCT, TPA-TCT enables characterisation measurements with three dimensional spatial resolution. A tabletop setup for the investigation of silicon based detectors was commissioned at CERN to pioneer the technique. A 430 fs pulse fiber...
Extensive studies of effects of annealing at 60C on charge collection efficiency were made with miniature n in p type silicon strip detectors during development and production of sensors for ATLAS ITk strip detector. Measurements were made with Alibava system with electrons from Sr90 source with detectors irradiated with reactor neutrons and low energy protons. At not too high bias voltages...
This project focuses on the investigation of trap energy levels introduced by radiation damage in epitaxial p-type silicon. Using 6-inch wafers of various boron doping concentrations (1e13, 1e14, 1e15, 1e16, and 1e17 cm−3) with a 50 µm epitaxial layer, multiple iterations of test structures consisting of Schottky and pn-junction diodes of different sizes and flavours are being fabricated at...
The High-Luminosity LHC will challenge the detectors with a nearly 10-fold increase in integrated luminosity compared to the previous LHC runs combined, thus the CMS detector will be upgraded to face the higher levels of radiation and the larger amounts of data collected. The High-Granularity Calorimeter (HGCAL) will replace the current endcap calorimeters of the CMS detector. It will...
The ATLAS ITk Strip detector is a planned tracker upgrade for the High-Luminosity LHC which utilizes n$^+$-in-p silicon sensors fabricated by Hamamatsu Photonics with 300 $\mu$m signal-generation thickness and approximately 75 $\mu$m strip pitch. Measurements and simulations are presented for silicon strip sensors and test devices, including after irradiation to fluences up to 1.4*10$^{15}$...
A significant challenge in producing the larger structures typical for silicon strip sensors is the limited reticle size of the CMOS process. This problem can be solved through the so called stitching of the reticles.
The sensors that are the subject of this talk are passive CMOS strip sensors, containing three different strip variants, designed by the University of Bonn. They were produced...
Wide-bandgap semiconductors such as gallium nitride (GaN) have inherent advantages based on their material properties such as high critical field, high electron mobility and most importantly, high bond energies that lead to lower displacement damage, all of which imply a high radiation hardness. This material system should therefore be considered as an alternative to silicon-based detectors...
