Conveners
Session8
- Kazuhisa Yamamura (H)
- Yoshinobu Unno (High Energy Accelerator Research Organization (JP))
Graeme Douglas Stewart
(University of Glasgow)
07/09/2012, 08:30
Radiation effects
ORAL
We performed edge and surface TCT measurements of a double sided 3D silicon strip detector at the Jozef Stefan Institute. Double sided 3D devices are a useful counterpart to traditional planar devices for use in the very highest radiation environments. The TCT techniques allow the electric fields in 3D devices to be probed in a way not possible before.
Short 3D strip detectors, produced at...
Giulio Pellegrini
(Instituto de Microelectrónica de Barcelona, IMB-CNM-CSIC, Barcelona, Spain)
07/09/2012, 08:50
Pixel technologies - 3D sensors
ORAL
The upgrade of the LHC to HL-LHC envisaged for 2020 requires silicon detectors of unprecedented radiation tolerance for the silicon tracking detectors. The very high luminosity foreseen (2.5 x 1034cm-2s-1) implies that the innermost layers detectors, at about 3 cm from the interaction point, of the vertex detector will be exposed to fluence up to 1.4x1016cm-2 1 MeV neutron equivalent for the...
Dr
Cinzia Da Via
(University of Manchester (GB))
07/09/2012, 09:10
Pixel technologies - 3D sensors
ORAL
Vertex detectors for the next LHC experiments upgrades will need to have low mass while at the same time be radiation hard and with sufficient granularity tu fulfill the physics challenges of the next decade. Based on the gained experience with 3D silicon sensors for the ATLAS IBL project and the ongoing developements on light materials, interconnectivity and cooling, this paper will discuss...
Dr
Juha Kalliopuska
(VTT)
07/09/2012, 09:30
Pixel technologies - Hybrid pixels
ORAL
The edgeless or active edge silicon pixel detectors have been gaining a lot of interest recently due to improved silicon processing and interconnection technology capabilities. VTT has been one of the drivers of the edgeless process technology on 6" (150 mm) wafers. Last year we were able to gather 17 institutions and industrial companies to join for a multi project wafer process of edgeless...
Anna Macchiolo
(Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
07/09/2012, 09:50
Pixel technologies - Hybrid pixels
ORAL
The R&D activity here presented is focused on the development of a new module concept for the upgrade of the ATLAS pixel system at the High Luminosity LHC (HL-LHC). It employs thin pixel sensors together with a novel vertical integration technology offered by the Fraunhofer Institute EMFT in Munich, consisting of the Solid-Liquid-InterDiffusion (SLID) interconnection, which is an alternative...
Tobias Wittig
(Technische Universitaet Dortmund (DE))
07/09/2012, 10:30
Radiation effects
ORAL
ATLAS plans two major upgrades of its pixel detector on the path to HL-LHC: First, the insertion of a 4th pixel layer (Insertable B-Layer, IBL) is currently being prepared for 2013. This will enable the ATLAS tracker to cope with an increase of LHC's peak luminosity to about 3E34 cm^-2 s^-1 which requires a radiation hardness of the sensors of up to 5E15 n_eq cm^-2. Towards the end of this...
Paul Dervan
(University of Liverpool (GB))
07/09/2012, 10:50
Pixel technologies - Hybrid pixels
ORAL
Pixel detectors will be extensively used for the four innermost layers of the upgraded ATLAS experiment at the future High Luminosity LHC (HL-LHC) at CERN. The total area of pixel sensors will be over 5 m2. The silicon sensors that will instrument the pixel volume will have to face several technology challenges. They will have to withstand doses up to 2×1016 neq cm-2, to have a reduced...
Richard Bates
(University of Glasgow (GB))
07/09/2012, 11:10
Pixel technologies - Hybrid pixels
ORAL
The ATLAS pixel detector for the HL-LHC will require the development of large area pixel modules that can withstand does up to 2x1016 neq cm-3. The area of the pixel system will be over 5m2 and as such low cost, large area modules are required. The development of a quad module based on 4 FE-I4 ROIC will be discussed. The FE-I4 ROIC is a large area chip and the yield of the flip-chip process on...
