Speaker
Description
This study investigates radiation damage in CZ p-type silicon pad diodes irradiated with 1 MeV electrons and Co-60 gamma rays, using Capacitance Deep-Level Transient Spectroscopy (C-DLTS), Current Deep-Level Transient Spectroscopy (I-DLTS) and Thermally Stimulated Current (TSC) techniques. The results are compared to those of Co-60 gamma-irradiated epitaxial (EPI) silicon material. In CZ material, a unique compensation capacitance behavior was observed, possibly linked to a defect not detected in irradiated EPI bulk. Additionally, the introduction rate of the BiOi defect, a candidate for so-called acceptor removal, was found to be lower in CZ material, likely due to its higher oxygen content. These findings suggest pronounced differences in radiation-induced defect formation and behaviour between CZ and EPI silicon materials.
| Type of presentation (in-person/online) | in-person presentation |
|---|---|
| Type of presentation (scientific results or project proposal) | Presentation on scientific results |
