Speaker
Description
The Boron containing radiation induced donor BCD (attributed in the literature to BiOi) is a bistable defect located at approximately Ec-0.25V and is the cause for the acceptor removal in p-type samples. The bistable nature of the defect has been previously evidenced in high resistivity samples (12 kΩcm), via the fluctuations observed in depletion voltage after a stimulus of excess charge carriers at ambient temperatures. In its ground state (A) the BCD is in a positive charge state and in its metastable state (B) has a neutral charge state. The magnitude of the acceptor removal process determined in C-V measurements depends on the charge state of BCD, being significant larger when the defect is in donor charge state A than when it is in the neutral charge state B. Accordingly, if succeeding to switch and froze-in the defect configuration in its neutral charge state, the detrimental acceptor removal effect will be reduced to a half. We will present our on-going studies (C-V/TSC) on this matter on PAD samples of different resistivity irradiated with 10^14 MeV neutrons/cm^2. Our experiments show that the change of the BCD configuration into its less detrimental B state, is more efficient as the resistivity increases, a behavior qualitatively explained by the flow of holes and electrons through the diodes. In addition, we noticed that a bistable behavior is also manifested by the H152K clusters, hole traps with acceptor energy levels.
| Type of presentation (in-person/online) | online presentation (zoom) |
|---|---|
| Type of presentation (scientific results or project proposal) | Presentation on scientific results |
