Speaker
Description
Within this project next generation strip sensors for large area applications will be developed. In recent years the consortium of the universities of Bonn, Dortmund, Freiburg and DESY developed stitched passive CMOS strip sensors fabricated by LFoundry in a 150 nm technology, with an additional backside processing from IZM Berlin. The sensors have a thickness of 150 μm, a resistivity of 3-5 kΩ cm and a strip pitch of 75.5 μm. By employing the stitching technique two different strip lengths have been realised, with the short format having three and the long having five stitches. A total of three different strip sensor designs have been investigated. They each vary in doping concentration and width of the n-well to study various depletion concepts and electric field configurations. Unirradiated as well as irradiated sensors have been studied with several measurement techniques, including probe station characterisation, lab measurements with lasers and Sr90-sources and, in particular, test beam campaigns of the different sensor designs in various stages of irradiation. We demonstrated that large area sensors with sufficient radiation hardness can be obtained by stitching in this CMOS process. Based on the positive results obtained it is planned to include a front-end stage into the strips to move towards a fully monolithic strips sensor.
The project targets the technology area DRDT 3.1 - Achieve full integration of sensing and microelectronics in monolithic CMOS strip sensors.
| Type of presentation (in-person/online) | in-person presentation |
|---|---|
| Type of presentation (scientific results or project proposal) | project proposal for future work |
