Speaker
Description
Recent advantages in the detector production have facilitated the manufacture of pixelated 4H-SiC detectors, which can be an alternative to silicon ones especially in the harsh radiation environment, or in the environment with high temperatures, where such sensors profit from their higher band gap. Moreover, thanks to an elastic scattering cross-section of carbon for fast neutrons the SiC sensors have higher neutrons detection efficiency than Si sensors.
In the present contribution, we characterize pixelated 4H-SiC sensors of ~80 µm sensitive thickness flip-chip bonded to the Timepix3 ASIC. Comprehensive testing was performed including measurement of IV curves, depletion voltage scans, determination of the achievable energy resolution for gammas and MIPs, as well as a study of the response to monoenergetic fast neutrons, and mixed relativistic ions. By performing measurements at grazing angle, the latter measurement allows to study the dependence of the holes drift velocity on the electric field when irradiating at grazing angle utilizing the 1.5 ns time-stamp measurement precision of Timepix3 [1]. The holes mobility was measured to be μh = (35.2±3.5) cm2/V/s, consistent with literature.
References
[1] P. Smolyanskiy et al 2021 JINST 16 C12023
Acknowledgements
B.B. and P.S. acknowledge funding from the Czech Science Foundation (GACR) under Grant No. GM23-04869M.
| Workshop topics | Sensor materials, device processing & technologies |
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