Speaker
Description
We demonstrate the application of the Three-Photon Absorption Transient Current Technique (3PA-TCT) for the characterization of 3D silicon column device, with an active thickness of 285 µm and pitch of 55 um, manufactured at IMB-CNM through the RD50 Common Project. The work presented in this contribution is done within the framework of the CERN DRD3 and CERN Rd50 Collaborations. To our best knowledge, this technique is not utilized yet on the 3D sensors, and our work presented here is the first one. The characterization was performed at the EU laser facility ELI ERIC, ELI Beamlines in Prague, utilizing advanced nonlinear optical techniques to achieve localized charge generation with high spatial resolution while at the same time preventing the contribution from the Single Photon Absorption (SPA) which is present in significant amount in the Two Photon Absorption (TPA) when irradiated samples are studied (affecting this way the precision of the timing measurements) which is even more serious as radiation fluency and thus the amount of radiation defects increase. The 3PA technique as a novel 3D timing characterisation tool for the 3D Si irradiated sensors was tested on both single and large multiple 3D Hexagon and Square structures irradiated at the neutron fluency of 10e16 neq/cm2 at the TRIGA Reactor of the Jozef Stefan Institute in Ljubljana, exploiting this way both radiation hardness and timing under the extreme radiation conditions.
| Workshop topics | Detector systems |
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