Speaker
Description
The Swiss Light Source (SLS) is currently in the final stages of upgrading to
a diffraction-limited storage ring configuration, SLS 2.0. This upgrade will
significantly enhance the brilliance by up to two orders of magnitude. However,
it introduces new challenges for silicon detectors due to increased radiation
damage. A primary concern is the higher accumulated dose received by the
front-end electronics, which may lead to performance degradation over time due
to total ionizing dose (TID) effects [1].
To investigate these effects, we studied test structures developed in 110 nm
technology. These structures were irradiated at different dose rates at room
temperature using an in-house X-ray source. We evaluated the analog and digital
functionalities of these structures to assess the impact of TID under different
irradiation conditions, with particular focus on dose rate dependence. We also
examined the annealing dynamics to understand the potential for recovery or
further degradation following irradiation.
References
[1] J. S. George. An overview of radiation effects in electronics. In 25th
International Conference on the Application of Accelerators in Research and
Industry, volume 2160, page 060002, 2019.
| Workshop topics | Detector systems |
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