International Conference on Quantum Technologies for High-Energy Physics

Silicon Photonic Integrated Circuit for Linear Optics Quantum Computing

Not scheduled

20m

Pas Perdus and Mezzanine (CERN)

poster Networking cocktail and Poster Session

Speaker

Thu Ha Dao (Istituto Nazionale di Fisica Nucleare, Sezione di Roma Tor Vergata, 00133 Roma, Italy)

Description

The QUANTEP project focuses on developing and implementing a comprehensive silicon photonics integrated circuit for quantum computation using linear quantum optics and single photons. A key prototype under investigation is the universal two-qubit Controlled-NOT (C-NOT) gate, which employs a linear, coincidence basis gate requiring only single photons as inputs. This prototype serves as a foundational testbed for developing more advanced quantum circuits, which will eventually necessitate integrated on-chip single-photon sources and detectors.

The project employs a 220 nm Silicon-On-Insulator (SOI) CMOS process as the technology platform for silicon photonics integrated circuits. For the detection stage, the proposed solution is an integrated Bi$_2$Se$_3$/n-Si heterojunction. Bi$_2$Se$_3$ has been proven as a topological insulator with efficient IR absorption and Dirac–like metallic surface. The project also explores novel quantum-device concepts utilizing heterostructured semiconductor nanowires, graphene, and other 2D materials, emphasizing their potential for precise control over light-matter interactions.

The SOI structures have been designed, and all associated devices are currently undergoing implementation and testing.
The integrated linear optics quantum circuits shall undergo comprehensive characterization, with their logic and functionality evaluated in fully integrated implementations.

Email Address of submitter

tdao@roma2.infn.it

Short summary

The QUANTEP project develops silicon photonics integrated circuits for quantum computing, using a 220 nm SOI CMOS process. A key prototype, the two-qubit Controlled-NOT (C-NOT) gate, relies on single photons and serves as a testbed for advanced circuits requiring on-chip photon sources and detectors. The project explores Bi₂Se₃/n-Si heterojunctions for efficient IR detection and investigates novel quantum-device concepts using nanowires, graphene, and 2D materials to enhance light-matter interactions. Designed SOI structures are under testing, with integrated circuits set for characterization and logic validation.