Speaker
Prof.
Juozas Vaitkus
(Vilnius University)
Description
The irradiated Si pad structures were investigated. The details of conductivity and photoconductivity mechanisms are analyzed by investigation of free carrier concentration and mobility temperature dependence, and by thermally stimulated current using different excitation by light conditions. The effects of microinhomogeneities were observed by an existence of the persistent current and by the dependence of TSC activavtion energy on the applied bias. The analyze of photoconductivity decay in a presence of a few levels was analyzed and discussed in a frame of earlier proposed model of clusters.
Author
Prof.
Juozas Vaitkus
(Vilnius University)
Co-authors
Dr
Algirdas Mekys
(Vilnius University, Institute of Applied Research)
Prof.
Eckhart Fretwurst
(Hamburh University)
Mr
Edgaras Dvinelis
(Vilnius University, Institute of Applied Research)
Dr
Ernestas Zasinas
(Vilnius University, Institute of Applied Research)
Mr
Giedrius Mockevicius
(Vilnius University, Institute of Applied Research)
Dr
Jurgis Storasta
(Vilnius University, Dept. Semiconductor Physics)
Mr
Neimantas Vainorius
(Vilnius University, Institute of Applied Research)
Mr
Vytautas Rumbauskas
(Vilnius University, Dept. Semiconductor Physics)
