Speaker
Pawel Kaminski
(Institute of Electronic Materials Technology, Warsaw, Poland)
Description
We show the results of both qualitative and quantitative analysis of defect levels in standard and oxygen-rich epitaxial silicon subjected to 24 GeV/c proton irradiation with a fluence of 1.7x10^16 cm-2 and annealing at temperatures of 20, 80, 160 and 240 oC. The radiation defect levels in the bandgap have been scanned by High-Resolution Photoinduced Transient Spectroscopy. In the standard epilayer annealed at 240 oC, the concentration of the predominant shallow trap with the activation energy of 130 meV, assigned to the silicon tetra-interstitial (I4),was 1.2x10^15 cm-3. The concentrations of the very deep traps with activation energies of 565 and 575 meV assigned to tri-vacancy(V3) and tetra- vacancy(V4), were 5.0x10^15 and 7.1x10^15 cm-3, respectively.
In the oxygen-rich epilayer annealed at this temperature,the
concentration of the predominant 130-meV trap was 2.2x10^15cm-3.The concentrations of the 565-meV and 575-meV traps,were ~1x10^15 and ~1.5x10^15 cm-3,respectively.
Primary author
Pawel Kaminski
(Institute of Electronic Materials Technology, Warsaw, Poland)
Co-authors
Eckhart Fretwurst
(Institute for Experimental Physics, University of Hamburg, Germany)
Jaroslaw Zelazko
(Institute of Electronic Materials Technology, Warsaw, Poland)
Joern Lange
(Institute for Experimental Physics, University of Hamburg, Germany)
Roman Kozlowski
(Institute of Electronic Materials Technology, Warsaw Poland)
