Speaker
Description
Low-Gain Avalanche Detectors (LGADs) are silicon sensors designed to deliver excellent time resolution, with a precision better than 20 ps. This exceptional time resolution makes them highly suitable for applications demanding precise timing measurements, such as high-energy physics experiments and medical imaging. The performance of LGADs is influenced by various factors, including charge deposition, charge collection efficiency, electric field distribution, and radiation-induced degradation, highlighting the necessity for detailed simulation studies to accurately characterize and optimize these sensors.
While TCAD simulations are commonly used for detector design, particularly for modeling doping profiles and electric field distributions, Monte Carlo simulations can complement this approach by providing a more detailed and accurate modeling of the complex physical processes involved in charge deposition and transport in semiconductor detectors. In this work, we take advantage of Allpix² by combining both TCAD and Monte Carlo simulation approaches to provide a comprehensive evaluation of LGAD performance under different operating conditions. The doping profiles and electric field distributions, extracted from TCAD simulations, are integrated into the Allpix² framework, enabling a detailed analysis of the sensor's response. The simulation investigates key aspects such as charge collection and the radiation-induced effects on the overall performance of the detector, providing valuable insights into the sensor's behavior in high-radiation environments.
| Will the talk be given in person or remotely? | Remotely |
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