Speaker
Description
Key requirements for future vertex detectors at lepton colliders include spatial resolutions on the order of 3 µm and nanosecond time resolution. Several R&D activities are currently underway to meet these demands, exploring various approaches and technologies. Enhanced Lateral Drift (ELAD) silicon sensors leverage charge-sharing mechanisms to improve spatial resolution through a non-homogeneous electric field, created by buried doping implants within the sensor. This allows to achieve the spatial resolution targhet with larger pixel pitch, reducing the number of readout channels and increasing the space available for the pixel front-end. This allows achieving the spatial resolution target with a larger pixel pitch, reducing the number of readout channels and increasing the space available for the pixel front-end.
Extensive simulations have been performed using a combination of TCAD and Allpix$^2$ frameworks to optimize the electric field and spatial performance. The results indicate the feasibility of achieving an almost linear charge-sharing behavior between two readout electrodes, reaching O(5 µm) spatial resolution using a 150 µm thick ELAD sensor with 55 µm pitch.
This contribution will present the ELAD technology, detailing the simulation setup and discussing results obtained for different geometric and doping configurations. The findings from this study have guided the design of the first ELAD prototypes, currently in production, and will serve as a benchmark for future laboratory and test beam measurements.
| Will the talk be given in person or remotely? | In person |
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