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Zijun Xu (Chinese Academy of Sciences (CN))10/11/2025, 14:15WG1 - Monolithic Sensors
The HVCMOS technology is promising technology for tracking detectors at future experiments such as LHCb upgrade and Higgs factories, for its radiation hardness, fast charge collection and hence good spatial and timing resolution. Development of HVCMOS in smaller feature size will allow more functionailities in the same pixel area, and a reduced power consumption. We proposed a project to...
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Eva Vilella Figueras (University of Liverpool (GB))10/11/2025, 14:35WG1 - Monolithic Sensors
We are organising a DRD3 community shared submission in the 150 nm High Voltage CMOS process (LF15A) from LFoundry. This joint submission will include several chips designed by the DRD3 community to further advance the R&D of High Voltage CMOS sensors for future detector applications in physics experiments. By sharing the wafer among several chips with compatible requirements, this...
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Joaquim Pinol Bel (IFAE)10/11/2025, 14:55WG1 - Monolithic Sensors
MiniCactus V2 is a demonstrator intended to study the timing performance that can be obtained from non amplified large electrode CMOS sensors developed with the 150 nm LFoundry HV CMOS LF15A technology.
MiniCactus V2 is the most recent iteration of a line of timing oriented sensors, with improved performance over its predecessors. It features pixels of different sizes, from 1mm x 1mm to 0.5...
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Prof. Philippe Schwemling (Université Paris-Saclay (FR))10/11/2025, 15:15WG1 - Monolithic Sensors
One of the limitations of monolithic sensors is their signal over noise ratio, which constrains strongly the downstream front-end electronics, especially for timing oriented sensors, and leads to architectures that are quite power hungry. Present monolithic designs have been shown to reach a 50 ps time resolution for MIPs, with a power consumption of several hundreds of mW per $cm^2$.
A...
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Walter Snoeys (CERN)10/11/2025, 15:35WG1 - Monolithic Sensors
Report on the activity within DRD7.6a project to prepare submissions in the TPSCo 65 nm technology. Status of the possible IP sharing and run schedule will be discussed.
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Anastasia Kotsokechagia (CERN)10/11/2025, 16:25WG1 - Monolithic Sensors
The CASSIA (CMOS Active SenSor with Internal Amplification) project is focused on developing monolithic active pixel sensors (MAPS) with internal signal gain in the Tower 180nm CMOS process. The advantages of internal amplification include a higher input signal enabling simplification of in-pixel electronics, an improved signal-to-noise ratio for radiation hardness, and superior timing...
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Finn King (Deutsches Elektronen-Synchrotron (DE))10/11/2025, 16:45WG1 - Monolithic Sensors
The Analog Pixel Test Structures (APTS) are a family of sensor prototypes produced in the TPSCo CMOS 65 nm ISC technology. They contain 4x4 pixels of varying pitches between 10 and 25 μm, implement different diode designs, namely standard, n-blanket and n-gap, to tailor charge collection, and further design variations to optimize the sensor layout in the given process. The structures have been...
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Roberto Russo (Austrian Academy of Sciences (AT))10/11/2025, 17:05WG1 - Monolithic Sensors
The OCTOPUS (Optimized CMOS Technology for Precision in Ultra-thin Silicon) project, part of the DRD3 collaboration, aims to develop Monolithic Active Pixel Sensors (MAPS) based on the TPSCo 65 nm CMOS process, designed to meet the key requirements of vertex detectors operating in the next generation of lepton colliders.
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The sensor development is planned in two stages. The first large-area... -
Michael Deveaux (GSI - Helmholtzzentrum fur Schwerionenforschung GmbH (DE))10/11/2025, 17:25WG1 - Monolithic Sensors
Developing such advanced MAPS technology may exceed the individual capacities of smaller experimental collaborations. The MANTA project addresses this challenge through a joint R&D initiative aimed at creating a versatile, configurable sensor platform. The sensor will be designed to adapt to various experimental environments via slow control mechanisms, enabling a wide range of use cases...
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Carlos Solans Sanchez (CERN), Thomas Koffas (Carleton University (CA))10/11/2025, 17:45WG1 - Monolithic Sensors
The existing MALTA design is employing low capacitance of the collection electrode together with full depletion of the sensitive volume and is fabricated in Tower 180 nm technology. Currently, further development of the MALTA chip is shifting towards substantially better timing performance (timing resolution <500 picoseconds) as well as improved integration capabilities of the sensor in larger...
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Alessandro Tricoli (Brookhaven National Laboratory (US)), Anna Macchiolo (University of Zurich (CH)), Martin Van Beuzekom (Nikhef National institute for subatomic physics (NL))11/11/2025, 09:00
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Gordana Lastovicka-Medin (University of Montenegro (ME))11/11/2025, 09:05WG2 - Hybrid silicon sensors
We report the first results on irradiated 3D Double Side Double Column devices using Three-Photon and Two-Photon Absorption Transient Current Technique. Devices are fabricated at the CNM in Barcelona (3D Rd50 Project) and irradiated at the Josef Stefan Institute at two fluences: 10^15 and 10*17 neq/cm2. Multicell 3D Hex structure was studied. Additionally, we show the results from the Single...
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Yannik Sibold (University of Freiburg (DE))11/11/2025, 09:23WG2 - Hybrid silicon sensors
Sensors with fast timing capabilities are a critical component for all future tracking detectors to disentangle high multiplicity events. Double-sided silicon 3D sensors utilize columns etched orthogonal to the sensor substrate as their readout electrodes, in contrast to regular, planar detector technologies, where the electrodes are only found on the sensor surface. 3D sensors display, in...
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Kuo Ma (University of Science and Technology of China (CN))11/11/2025, 09:41WG2 - Hybrid silicon sensors
Unlike the planar detector, the distance of electrodes and the thickness of substrate is decoupling in 3D silicon detector. According to the shapes of electrodes, 3D sensors can be divided into two types: the columnar electrodes and the trenched electrodes. Through shortening the distance between the electrodes, the sensor can provide higher position resolution and can also be more irradiation...
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Gregor Kramberger (Jozef Stefan Institute (SI))11/11/2025, 09:59WG2 - Hybrid silicon sensors
Small pixel 3D sensors were produced by IME-CAS on 8 inch p type wafers of 700 Ωcm. The 30 μm thick silicon detectors have trench walls (ohmic p+) and very narrow n-column columns with diameter of only 0.5 $\mu$m. A 5 × 5 matrix of 35 × 35μm2 was measured with Two Photon Absorption Transient Current Technique. At higher voltages the devices show stable operation with high gain originating from...
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Gordana Lastovicka Medin (University of Montenegro (ME))11/11/2025, 10:17WG2 - Hybrid silicon sensors
We report the first results from our study on the non-irradiated novel silicon 3D-trench pixel detector based on 8-inch CMOS process (IME) originated from the first batch production. A novel 3D-Trench pixel sensor with an enclosed deep trench surrounding the central columnar cathode, has stronger isolation with neighbouring pixels and sharper electric field around the cathode. The first batch...
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Huimin Ji (Institute of Microelectronics, Chinese Academy of Sciences)11/11/2025, 10:35WG2 - Hybrid silicon sensors
In the construction of High-Luminosity Large Hadron Collider (HL-LHC) and Future Circular Collider (FCC) experiments, 3D pixel sensors have become indispensable components due to their superior radiation hardness, fast response, and low power consumption. However, there are still significant challenges in the process of 3D sensors manufacturing. In this work, single devices and arrays of 3D...
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Ebru Simsek (Yildiz Technical University (TR))11/11/2025, 11:23WG2 - Hybrid silicon sensors
The High-Granularity Calorimeter (HGCAL) of the CMS experiment at CERN uses radiation-hard, fast-response silicon sensors to maintain stable and precise operation during HL-LHC conditions. The sensors are fabricated on 8-inch p-type wafers with three different thicknesses (120 μm, 200 μm, and 300 μm), two main granularities (~0.5 cm2 and ~1 cm2 for standard cells), as...
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Artem Shepelev (University of Birmingham (GB))11/11/2025, 11:41WG2 - Hybrid silicon sensors
This work presents a detailed study of the timing performance and its spatial variation within the pixel of planar sensors, using the high-resolution TimePix4 beam telescope for precise, track-referenced measurements. Sensors of 200, 100, and 50 um thickness were coupled to the trigger-less TDCpix ASIC with 100 ps timestamping, originally developed for the NA62 GigaTracker at CERN. Tests were...
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Daan Jasper Oppenhuis (Nikhef National institute for subatomic physics (NL))11/11/2025, 11:59WG2 - Hybrid silicon sensors
This presentation will show results of an inverse Low-Gain Avalanche Detector (iLGAD) with a pitch of 55 μm, a thickness of 250 μm and a large-area (2 cm2), bump bonded to a Timepix4 ASIC. The Timepix4 ASIC is the latest hybrid pixel detector of the Medipix collaboration. It consists of 448 by 512 pixels with a pixel pitch of 55 µm. The best obtained time resolution for a 100 µm planar n-on-p...
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Victor Coco (CERN)11/11/2025, 12:17WG2 - Hybrid silicon sensors
The development of precision silicon sensors is a key area of advancement in high-energy physics, particularly for the innermost tracking devices of future collider experiments. These sensors require a timing resolution on the order of 50 ps, pixel pitches of 50 µm or below, and radiation tolerance up to 10$^{16-17}$n$_{eq}$.cm$^{-2}$. One such innovation is the Silicon Electron Multiplier...
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Parisa Rezaei Mianroodi11/11/2025, 12:35WG2 - Hybrid silicon sensors
This study investigates the inter-pixel distance (IPD) of 250 µm-thick
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Trench-isolated Low Gain Avalanche Detectors (Ti-LGADs) fabricated by
Micron Semiconductor Ltd. Single Photon Absorption (SPA) and Two Photon
Absorption (TPA) Transient Current Technique (TCT) scans were performed
at the Extreme Light Infrastructure (ELI ERIC) to study the dependence
of the effective IPD on interaction... -
11/11/2025, 14:00
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Iskra Velkovska (Jozef Stefan Institute (SI))11/11/2025, 14:32WG2 - Hybrid silicon sensors
Trench-isolated LGADs (TI-LGADs), developed at FBK, are devices in which pixelated LGAD pads are separated by physical trenches etched into the silicon substrate and filled with a dielectric material. Designed as an alternative to implant-based inter-pad isolation techniques (such as JTEs), this technology offers a significant reduction in dead regions, thereby mitigating fill-factor...
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Han Li (University of Science and Technology of China (CN))11/11/2025, 14:50WG2 - Hybrid silicon sensors
The development of next-generation particle detectors capable of precise 4D tracking is crucial for future high-energy physics experiments. AC-LGAD have emerged as a leading technology to achieve excellent spatial and temporal resolution simultaneously. This report details the development and characterization of a new batch of AC-LGAD detectors fabricated by the University of Science and...
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Gaetano Barone (Brown University), Xiaohe Shen (Brown University (US))11/11/2025, 15:08WG2 - Hybrid silicon sensors
Devices with internal gain, such as Low Gain Avalanche Diodes (LGADs), demonstrate O(30) ps timing resolution, and they play a crucial role in High Energy Physics (HEP) experiments, among other applications. Similarly, resistive silicon devices, such as AC-coupled Low Gain Avalanche Diodes (AC-LGADs) sensors, achieve a fine spatial resolution while maintaining the LGAD’s timing resolution....
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Don Ching-Long Wong, Gaetano Barone (Brown University), Jessica Tang (Brown University (US))11/11/2025, 15:26WG2 - Hybrid silicon sensors
Resistive Silicon Devices (RSDs), particularly AC-coupled Low Gain Avalanche Diodes (AC-LGADs), open the path of pico-second level space and time (4D) tracking in high-energy physics (HEP) experiments such as those at the Large Hadron Collider (LHC), Electron-Ion Collider (EIC), and future (lepton) colliders facilities. These sensors combine the fine spatial resolution of segmented detectors...
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Pablo Fernandez-Martinez (IMB-CNM, CSIC)11/11/2025, 15:44
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Gabriele Giacomini (Brookhaven National Laboratory (US))11/11/2025, 15:54
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Dr Simone Michele Mazza (University of California,Santa Cruz (US))11/11/2025, 16:34WG2 - Hybrid silicon sensors
Low Gain Avalanche Detectors (LGADs) are characterized by a fast rise time (~500ps) and extremely good time resolution (down to 17ps), and potential for a very high repetition rate with ~1 ns full charge collection. For the application of this technology to near future experiments such as e+e- Higgs factories (FCC-ee), the ePIC detector at the Electron-Ion Collider, or smaller experiments...
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Nicolo Cartiglia (INFN Torino (IT))11/11/2025, 16:52WG2 - Hybrid silicon sensors
In this contribution, I will present new studies on the properties of DC-RSD. These sensors, manufactured at FBK, have been tested at 2 test beams at the DESY beam line. The performance of prototypes with different surface resistivities and pixel sizes will be presented. This study also focuses on the determination of the relationship between surface resistivity and pixel size, identifying a...
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Francesca Carnesecchi (INFN e Laboratori Nazionali di Frascati (IT))11/11/2025, 17:10WG2 - Hybrid silicon sensors
The proposed ALICE 3 experiment requires outstanding Particle Identification (PID) based on Time-of-Flight (TOF), setting a highly ambitious timing resolution target of 20 ps. Achieving this goal necessitates intensive Research and Development (R&D) into next-generation silicon sensor technology for large-area systems.
Low-Gain Avalanche Diodes (LGADs) are primary candidates due to their...
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Andrew Donald Gentry (University of New Mexico (US))11/11/2025, 17:28WG2 - Hybrid silicon sensors
Silicon detectors typically require a large inactive region surrounding the sensitive region, to accommodate guard rings, which help maintain the electric field uniformity around peripheral pixels, and isolate high current generation due to defects at the physical edges of the detectors. Sensors with reduced inactive regions around their periphery are desirable for applications in high-energy...
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Marco Ferrero (Universita e INFN Torino (IT))11/11/2025, 17:46WG2 - Hybrid silicon sensors
The preliminary characterisation of thin LGAD sensors on n-type substrate will be presented. Electrical performances from I-V and C-V measurements on the wafer will be shown, along with the gain behaviour using red and blue LEDs.
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Maurizio Boscardin (Fondazione Bruno Kessler (IT)), Maurizio Boscardin (FBK Trento)11/11/2025, 18:02
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Jairo Antonio Villegas Dominguez (Consejo Superior de Investigaciones Cientificas (CSIC) (ES))12/11/2025, 09:00WG2 - Hybrid silicon sensors
Low Gain Avalanche Detectors (LGADs) have recently emerged as key sensors for precise timing measurements, enabling accurate tracking of charged particles and photons in High Energy Physics (HEP) experiments and beyond. The time resolution is closely linked to the detector's gain, with a direct correlation between gain stability and timing precision. In turn, the gain of LGADs depends on the...
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Leo Cavazzini12/11/2025, 09:18WG2 - Hybrid silicon sensors
It was observed in several research groups that the gain of Low Gain Avalanche Diodes (LGADs) is significantly dependent on the amount of deposited charge and the angle of incidence of the interacting particle. In case of laser illumination, higher deposited charge results in lower gain values. Additionally, the focus of the laser is responsible for a decrease in the measured gain. The...
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Cristovao Beirao Da Cruz E Silva (Laboratory of Instrumentation and Experimental Particle Physics (PT))12/11/2025, 09:36WG3 Radiation Damage - Extreme Fluence
The PPS sub-detector of CMS, in operation since 2016, has shown exceptional performance, operating tracking and timing detectors in the challenging high radiation environment a few millimetres from the LHC beam. During Long Shutdown 3 the PPS detector will be upgraded with additional stations and a new timing detector based on LGAD+ETROC. The high and non-uniform irradiation requires dedicated...
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Florent Dougados (Consejo Superior de Investigaciones Cientificas (CSIC) (ES))12/11/2025, 09:54WG2 - Hybrid silicon sensors
IMB-CNM has been a main actor in the development of Low Gain Avalanche Detectors since the initial device conception, more than a decade ago.
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One of the challenges for LGAD is the deterioration of the gain and timing resolution after radiation damage due to the acceptor removal mechanism.
A well-established solution to increase radiation tolerance is carbon co-doping in the gain... -
Bojan Hiti (Jozef Stefan Institute (SI))12/11/2025, 10:12WG2 - Hybrid silicon sensors
ATLAS experiment will be upgraded with High Granularity Timing Detector (HGTD) for the high luminosity runs at Large Hadron Collider after 2029. It will utilize LGAD detectors placed in very harsh radiation environment. During the R&D phase sensors with carbon enriched gain layer were designed showing sufficient radiation hardness after reactor neutron irradiations of up to...
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Veronika Kraus (Vienna University of Technology (AT))12/11/2025, 10:30WG2 - Hybrid silicon sensors
Low Gain Avalanche Detectors (LGADs) have proven their suitability for precise timing in high-energy physics experiments and are therefore foreseen for the HL-LHC upgrades of the ATLAS and CMS detectors at CERN. Their performance, however, is limited by radiation-induced gain layer degradation, mainly due to acceptor removal. This study investigates irradiation with 18MeV, 24MeV, 400MeV and...
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Niels Sorgenfrei (CERN / University of Freiburg (DE))12/11/2025, 11:25WG3 Radiation Damage - Extreme Fluence
The study of radiation damage created inside the gain-layer of LGADs is nearly impossible with defect spectroscopy techniques.
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To investigate the gain-layer degradation at the defect level, the Gain-Layer Project has produced an extensive set of $p$-type pad diodes (19050 in total), whose bulk properties replicate the high doping concentrations of a gain layer.
Across 25 FZ wafers, various... -
Dr Yunyun Fan (Chinese Academy of Sciences (CN))12/11/2025, 11:55WG3 Radiation Damage - Extreme Fluence
Low Gain Avalanche Detectors (LGADs) exhibit excellent properties, including ultra-fast time resolution and a high signal-to-noise ratio. They are widely used in high-energy physics experiments for precise particle detection and time-of-flight measurements. However, irradiation introduces deep-level defects and causes detector performance degradation. Therefore, improving the radiation...
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Kevin Lauer (CIS Institut fuer Mikrosensorik GmbH (DE))12/11/2025, 12:15WG3 Radiation Damage - Extreme Fluence
Kevin Lauer,$^{1,2}$ Bernd Hähnlein,$^{1}$ Mario Bähr,$^{1}$ Kai Kühnlenz,$^{1}$ Phillipp Kellner,$^{1}$ Dirk Schulze,$^{2}$ Stefan Krischok,$^{2}$ Alexander Rolapp,$^{3}$ Christian Möller$^{1}$ and Thomas Ortlepp$^{1}$
$^{1}$ CiS Forschungsinstitut für Mikrosensorik GmbH, Konrad-Zuse-Str. 14, 99099 Erfurt, Germany
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$^{2}$ Technische Universität Ilmenau, Institut für Physik, Weimarer Str.... -
Dr Faiza Rizwan (CERN)12/11/2025, 12:35WG3 Radiation Damage - Extreme Fluence
Study of Si detectors for radiation tolerance at extreme fluences up to 1e18 neq/cm2 has been suffering with numerous challenges. Defects created in the crystal lattice, compensate the doping by trapping the free charge carriers, causing the depletion region to collapse. Resultantly, the electrical defect characterization tools become ineffective. This moves our attention towards the optical...
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George Alexandru Nemnes (Horia Hulubei National Institute for R&D in Physics and Nuclear Engineering)12/11/2025, 14:20WG3 Radiation Damage - Extreme Fluence
Neutral and charged point defects in silicon supercells containing vacancies and/or extrinsic impurities (B, P, C, O) are investigated using density functional theory (DFT) calculations. We consider a number of defects and determine the formation energies and the transitions between the charged states. The electronic structure is analyzed in detail, the focus being on defects that can explain...
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Milos Manojlovic (Consejo Superior de Investigaciones Cientificas (CSIC) (ES))12/11/2025, 14:40WG3 Radiation Damage - Extreme Fluence
nLGAD detectors are specifically designed for detecting shallow-penetrating radiation. In our previous work, we tested these devices using low-wavelength lasers and achieved reasonable detectability down to 200 nm. In this work, we explore the potential of nLGADs for the detection of shallow-penetrating ions, aiming to evaluate their gain and response to induced damage. Using Ion Beam Induced...
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Max Andersson (Uppsala University (SE))12/11/2025, 15:00WG3 Radiation Damage - Extreme Fluence
To face the higher levels of radiation due to the 10-fold increase in integrated luminosity during the High Luminosity LHC, the CMS detector will replace the current endcap calorimeters (CE) with the new High Granularity Calorimeter (HGCAL). It will facilitate the use of particle flow calorimetry with its unprecedented transverse and longitudinal readout and trigger segmentation, with more...
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Eva Fialova (CERN)12/11/2025, 15:50WG3 Radiation Damage - Extreme Fluence
Studies of the silicon dioxide (SiO$_2$) passivation layer in HGCAL's n-on-p sensors are important for qualifying their performance at the High-Luminosity LHC and for optimising the operation of future high-energy physics experiments. This work presents a novel method to evaluate the impact of the surface radiation damage on the inter-pad isolation in HGCAL sensors, by measuring the threshold...
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Agnieszka Oblakowska-Mucha (AGH University of Krakow (PL))12/11/2025, 16:10WG3 Radiation Damage - Extreme Fluence
The data-taking period of LHC Run 2 was finished at the end of 2018, providing an opportunity to study radiation damage effects in the LHC's most heavily irradiated silicon devices. In this presentation, we discuss new analyses of the evolution of the leakage current in the LHCb VELO sensors, accompanied by predictions from the Hamburg model. The leakage current's radial and longitudinal...
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Aurora Losana (università di Torino), Brendan Regnery (KIT - Karlsruhe Institute of Technology (DE))12/11/2025, 16:30WG3 Radiation Damage - Extreme Fluence
Resistive AC-coupled Silicon Detectors (RSD/AC-LGAD) are novel silicon sensors that provide both precise spatial and temporal resolution, making them a key technology for the next generation of collider experiments (HL-LHC, FCC, CEPC). Like all silicon devices, these sensors suffer from irradiation damage which create additional states in the silicon band gap that lead to macroscopic changes,...
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1. Response of AC-coupled Low Gain Avalanche Detectors to Ionizing and Non-ionizing Radiation DamageJiahe Si (University of New Mexico (US))12/11/2025, 16:50WG3 Radiation Damage - Extreme Fluence
Low gain avalanche diodes with DC- and AC-coupled readout were exposed to ionizing and non-ionizing radiation at levels relevant to future experiments in particle, nuclear, and medical physics and to astrophysics. Damage-related change in their acceptor removal constants and in the resistivity of the region between the guard ring and the active area are reported, as is change in the leakage...
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Andra-Georgia Boni (National Institute of Materials Physics – Romania)12/11/2025, 17:10WG3 Radiation Damage - Extreme Fluence
We present the results of DLTS investigation of as-grown and radiation-induced defects in n-type 4H-SiC Schottky diodes irradiated with different fluences of 6 MeV electrons. The only variable between the samples has been the irradiation fluence, varying from unirradiated state up to fluences as high as 6E14 e/cm2. The DLTS spectra were analyzed and simulated to extract the defect...
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Ioana Pintilie (National Inst. of Materials Physics (RO)), Dr Joern Schwandt (Hamburg University (DE))12/11/2025, 17:30
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Chenxi Fu (Chinese Academy of Sciences (CN))13/11/2025, 09:00WG4 - Simulations
We have extended RASER (RAdiation SEmiconductoR), a Python-based simulation package for solid-state particle detectors, to enable the simulation of pixelated silicon and silicon carbide (SiC) timing sensors. The spatial and temporal resolution of these sensors is evaluated through simulations of telescope beam tests and the transient current technique (TCT). By integrating DevSim and NGSpice,...
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Wei Li (Institute of High Energy Physics)13/11/2025, 09:20WG4 - Simulations
Carbon doping in Low Gain Avalanche Diodes (LGADs) has been experimentally proven to effectively mitigate irradiation-induced acceptor removal effects. In this work, a comprehensive multiscale simulation framework was developed, combining Monte Carlo simulations (primary collision), molecular dynamics (collision cascade), kinetic Monte Carlo (long-term evolution), and TCAD simulations to model...
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Djunes Janssens (CERN)13/11/2025, 09:40WG4 - Simulations
Accurate simulations of modern particle detectors are essential for understanding their operation and optimizing their performance. Garfield++ is an open-source Monte Carlo toolkit designed for detailed simulations of detectors based on ionization measurements in gases and semiconductors.
Using Monte Carlo integration techniques, Garfield++ simulates the drift of charge carriers in an...
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Tommaso Croci (INFN, Perugia Unit)13/11/2025, 10:00WG4 - Simulations
The increasing radiation levels expected in future high-luminosity collider experiments demand robust predictive models for the design and optimisation of semiconductor particle detectors operating under extreme fluences (above $1 \cdot 10^{16}$ 1 MeV n$_{eq}$/cm$^2$). Although TCAD-based modelling of radiation damage has evolved over the past two decades, a general-purpose model capable of...
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Anastasiia Velyka (Deutsches Elektronen-Synchrotron (DE))13/11/2025, 10:20WG4 - Simulations
The OCTOPUS (Optimised CMOS Technology for Precision in Ultra-thin Silicon) project, part of the DRD3 collaboration, aims to simulate, develop, and characterise fine-pitch monolithic sensors using the 65 nm TPSCo CMOS process. The project targets a spatial resolution of 3 µm, a temporal resolution below 5 ns, a material budget of 50 µm of silicon equivalent, and an average power consumption...
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Håkan Wennlöf (Nikhef National institute for subatomic physics (NL)), Marco Mandurrino (Universita e INFN Torino (IT))13/11/2025, 10:40WG4 - Simulations
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Carmen Torres Munoz (Universidad de Sevilla (ES))13/11/2025, 11:30WG5 - Characterization techniques - facilities
This study investigates the sensitivity of the Single-Photon Absorption Transient Current Technique (SPA-TCT) and the Two-Photon Absorption Transient Current Technique (TPA-TCT) to variations in defect density within semiconductor materials. Controlled ion implantation was performed on silicon pin detectors using four ion species (1H, 14N, 16O and 28Si), at different energies to create...
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Marco Ferrero (Universita e INFN Torino (IT))13/11/2025, 11:50WG5 - Characterization techniques - facilities
In this contribution, I will present the status of the RD50/DRD3 project “16-channel amplifier for thin Low Gain Avalanche Diodes based on the FAST3 ASIC.”
The objective of the project is to design and produce 16-channel amplification boards for LGAD sensors, based on the packaged FAST3 ASIC.The project involves: (i) the design and fabrication of a custom FAST3 package using Multi-Chip...
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Simon Spannagel (Deutsches Elektronen-Synchrotron (DE))13/11/2025, 12:10WG5 - Characterization techniques - facilities
The operation of instruments and detectors in laboratory or beamline environments presents a complex challenge, requiring stable and simultaneous operation of multiple devices, often controlled by separate hardware and software solutions.
Constellation is a flexible and network-distributed control and data acquisition software framework tailored to laboratory and beamline environments that...
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Younes Otarid (CERN)13/11/2025, 12:30WG5 - Characterization techniques - facilities
Caribou is a versatile data acquisition (DAQ) system developed within several collaborative frameworks (CERN EP R&D, DRD3, AIDAinnova, and Tangerine) to support laboratory and test-beam characterization of novel silicon pixel detectors. It combines a custom Control and Readout (CaR) board with a Xilinx Zynq System-on-Chip (SoC) running project-wide shared firmware and software stacks. The...
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Bojan Hiti (Jozef Stefan Institute (SI))13/11/2025, 13:50WG5 - Characterization techniques - facilities
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Marcos Fernandez Garcia (Universidad de Cantabria and CSIC (ES))13/11/2025, 14:05WG5 - Characterization techniques - facilities
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Prof. Ivan Vila Alvarez (Instituto de Física de Cantabria (CSIC-UC))13/11/2025, 14:20WG5 - Characterization techniques - facilities
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Xiyuan Zhang (Chinese Academy of Sciences (CN))13/11/2025, 14:40WG6 - Wide bandgap materials
This talk outlines the fabrication progress of the second-generation 4H-SiC Low-Gain Avalanche Diode (SICAR2), designed for a nominal gain of 10–15. Fabricated using 350nm stepper lithography and substrate thinning for improved timing resolution, the 2mm × 2mm die includes devices with 1.4mm and 0.55mm active areas, along with AC-pixelated (2×2) and AC-strip (4-strip) test structures. All...
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Ben Sekely (North Carolina State University)13/11/2025, 15:00WG6 - Wide bandgap materials
We investigate a novel approach for edge termination in SiC Low-Gain Avalanche Diodes
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(LGADs), based on controlled ion-implantation-induced damage in mesa-etched structures.
TCAD simulations and preliminary experimental results indicate that this method provides
efficient high-voltage termination through helium implantation performed near the mesa edge,
without consequent thermal... -
Sebastian Onder (Austrian Academy of Sciences (AT))13/11/2025, 15:20WG6 - Wide bandgap materials
The second production of planar 4H-SiC device wafers (CNM 17560) from the RD50 SiC LGAD common project was completed in summer 2025 at CNM Barcelona, consisting of two wafers — one with a 50µm and one with a 100µm epitaxial layer. The high yield of PAD diodes from this production now enables statistically robust, cross-institutional studies of radiation damage effects in 4H-SiC. In addition,...
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Huazhen Li (The University of Manchester (GB))13/11/2025, 16:10WG6 - Wide bandgap materials
3D diamond detectors feature conductive column arrays fabricated within Chemical Vapour Deposition (CVD) diamond using femtosecond-laser graphitization. In this work, several 3D geometries are simulated, with electric fields simulated in Sentaurus TCAD and signal responses studied via Monte Carlo simulations using Garfield++. Then a Neural Network (NN)–based algorithm is developed to analyse...
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Chen Xie (ETH Zurich (CH))13/11/2025, 16:30WG6 - Wide bandgap materials
The development of future high-energy colliders, such as the Future Circular Collider (FCC), requires detectors, particularly tracking systems, capable of operating in extremely high radiation environments. To meet this challenge, new radiation-tolerant materials are crucial. Owning to its wide band gap (5.47 eV) and considerable displacement energy (42 eV/atom), diamond is a promising...
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Georgios Provatas (Ruđer Bošković Institute)13/11/2025, 16:50WG5 - Characterization techniques - facilities
Due to their inherent properties, Chemical Vapor Deposition (CVD) diamond detectors are often highly appealing solutions in the field of nuclear technology, in applications where radiation sensors are expected to provide reliable response in harsh conditions and under high fluences in mixed radiation environments. Moreover, today’s technological challenges require the development of particle...
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Jack Nickson (IMB-CNM)13/11/2025, 17:10WG6 - Wide bandgap materials
Wide band-gap (WBG) semiconductors such as SiC and GaN are increasingly driving advances in high-efficiency, high-power electronics. With improved substrate growth and reduced defect densities, these materials have also emerged as promising candidates for radiation detection. However, further characterization and optimisation is required before they can replace silicon for some...
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Tomas Ceponis (Vilnius University)13/11/2025, 17:30WG6 - Wide bandgap materials
Gallium nitride (GaN) is a key semiconductor material for optoelectronic and high-power applications such as light-emitting diodes (LEDs), laser diodes, and high electron mobility transistors (HEMTs). Owing to its wide bandgap (3.4 eV), high thermal stability, and large displacement energy, GaN is also a promising candidate for ionizing radiation detection under extreme conditions. For such...
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Dominik Dannheim (CERN), Fabian Huegging (University of Bonn (DE)), Giovanni Calderini (LPNHE-Paris, Centre National de la Recherche Scientifique (FR))14/11/2025, 09:00
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Dr Michele Caselle (KIT - Karlsruhe Institute of Technology (DE))14/11/2025, 09:10WG7 - Interconnect
The DRD 7.6b activity focuses on establishing a coordinated and sustainable strategy for shared access to advanced 2.5D and 3D integration technologies within the DRD7 framework. This initiative aims to enable detector R&D groups to exploit key enabling technologies, such as Through-Silicon Vias (TSVs), Redistribution Layers (RDLs), silicon interposers, and wafer-to-wafer (W2W) bonding, for...
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Moritz Lauser (KIT - Karlsruhe Institute of Technology (DE))14/11/2025, 09:30WG7 - Interconnect
As part of the CERN EP R&D programme and the DRD3 collaboration, innovative and scalable concepts for hybridisation and module integration are being developed for pixel detector applications in future colliders. Most interconnect processes require specific surface properties and topologies of the bonding pads. An in-house Electroless Nickel Gold (ENIG) plating process is therefore under...
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Dr Ahmet Lale14/11/2025, 09:50WG7 - Interconnect
The development of hybrid pixel detectors requires reliable, flexible and cost-effective interconnect technologies that are suitable for single-die processing in R&D projects and for low-volume productions.
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This presentation reports on the current status and recent progress of in-house hybridization techniques developed within the CERN EP R&D programme and the DRD3 collaboration. These... -
Atul Gorane (University of Freiburg (DE))14/11/2025, 10:40WG7 - Interconnect
Increasing power density in modern detector front-end electronics and readout ASICs require advanced thermal management techniques that can handle heat dissipation more effectively. This challenge is particularly critical in high-energy physics experiments where spatial constraints and reliability requirements demand efficient thermal interfaces. This study presents a comprehensive comparative...
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Fabian Huegging (University of Bonn (DE))14/11/2025, 11:00
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Yuta Okazaki (KEK High Energy Accelerator Research Organization (JP))14/11/2025, 11:15WG8 - Outreach and dissemination
The MAPS Academy was held at KEK, Japan, for one week in July 2025. The program aimed to enhance early career researchers’ understanding of CMOS-MAPS technology and to provide a foundation for developing advanced detector systems. Supported by DRD3, the school received more than 60 applications, and 20 participants from 10 countries were selected to attend lectures and hands-on sessions on...
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Ulrich Parzefall (University of Freiburg (DE))14/11/2025, 11:35
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Gizem Gul Dincer (KIT - Karlsruhe Institute of Technology (DE))WG3 Radiation Damage - Extreme Fluence
To withstand the much higher radiation levels resulting from a tenfold rise in integrated luminosity at the High-Luminosity LHC, the CMS experiment will upgrade its existing endcap calorimeters (CE) with the new High Granularity Calorimeter (HGCAL). This detector will enable particle-flow calorimetry through its exceptionally fine transverse and longitudinal segmentation for both readout and...
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