Speaker
Description
Carbon doping in Low Gain Avalanche Diodes (LGADs) has been experimentally proven to effectively mitigate irradiation-induced acceptor removal effects. In this work, a comprehensive multiscale simulation framework was developed, combining Monte Carlo simulations (primary collision), molecular dynamics (collision cascade), kinetic Monte Carlo (long-term evolution), and TCAD simulations to model the entire process of displacement damage defect formation and evolution in irradiated LGADs, as well as their impact on the gain layer performance. The mechanism of irradiation-induced acceptor removal and the role of carbon in suppressing it were elucidated from the atomic scale. The Monte Carlo results show that the number of Frenkel pairs generated per unit length per 1 MeV neutron in silicon is 59.047 /cm, which is about 12.5% higher than the SIMS experimental value (52.5 /cm), indicating reasonable agreement within the typical uncertainty range. Molecular dynamics simulations show that the generation rate of Bi defects after the collision cascade is approximately g_Bi = 0.899 /cm, while experiments observe g_BiOi ≈ 0.1 /cm. This discrepancy may be due to the subsequent long-term evolution, during which some Bi defects combine with Oi to form BiOi, while others recombine and annihilate. A more accurate calibration of g_BiOi requires further KMC simulations, which are currently in progress.
| Type of presentation (in-person/online) | online presentation (zoom) |
|---|---|
| Type of presentation (I. scientific results or II. project proposal) | I. Presentation on scientific results |
