10–14 Nov 2025
CERN
Europe/Zurich timezone

Study of Irradiation-Induced Defects in EPI silicon PINs and LGADs by c/iDLTS

12 Nov 2025, 11:55
20m
6/2-024 - BE Auditorium Meyrin (CERN)

6/2-024 - BE Auditorium Meyrin

CERN

114
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Speaker

Dr Yunyun Fan (Chinese Academy of Sciences (CN))

Description

Low Gain Avalanche Detectors (LGADs) exhibit excellent properties, including ultra-fast time resolution and a high signal-to-noise ratio. They are widely used in high-energy physics experiments for precise particle detection and time-of-flight measurements. However, irradiation introduces deep-level defects and causes detector performance degradation. Therefore, improving the radiation hardness of LGADs is essential. In this work, capacitance-transient deep-level transient spectroscopy (c-DLTS) and current-transient deep-level transient spectroscopy (i-DLTS) were employed to investigate PINs and LGADs after various proton irradiation fluences up to 8e14 Neq/cm2. The defects of LGAD was observed by c/iDLTS method which has different defects energy level compared with PIN. We will show the tested defects of PIN and LGAD after 1e13 Neq/cm2 proton irradiation. And we will also show the defects of LGAD with different carbon dose after 8e14 proton irradiation.

Type of presentation (in-person/online) online presentation (zoom)
Type of presentation (I. scientific results or II. project proposal) I. Presentation on scientific results

Authors

Wei Li (Institute of High Energy Physics) Dr Yunyun Fan (Chinese Academy of Sciences (CN))

Presentation materials