Speaker
Description
We investigate a novel approach for edge termination in SiC Low-Gain Avalanche Diodes
(LGADs), based on controlled ion-implantation-induced damage in mesa-etched structures.
TCAD simulations and preliminary experimental results indicate that this method provides
efficient high-voltage termination through helium implantation performed near the mesa edge,
without consequent thermal annealing. The implantation locally reduces the effective doping
concentration in the gain layer by excess carrier removal, thereby relaxing the edge-enhanced
electric field. This significantly improves the breakdown voltage and enables operation at higher
gain and depletion depth, leading to enhanced detector performance, as verified by UV
transient-current measurements. The process utilizes standard silicon implantation tools and
processes, while also relaxing bevel-angle constraints typically encountered in high-voltage
mesa structures, offering simplified and more robust fabrication of SiC LGADs.
| Type of presentation (in-person/online) | online presentation (zoom) |
|---|---|
| Type of presentation (I. scientific results or II. project proposal) | I. Presentation on scientific results |
