Conveners
WG2 - Hybrid silicon technologies: Scientific results
- Anna Macchiolo (University of Zurich (CH))
- Alessandro Tricoli (Brookhaven National Laboratory (US))
- Martin Van Beuzekom (Nikhef National institute for subatomic physics (NL))
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Alessandro Tricoli (Brookhaven National Laboratory (US)), Anna Macchiolo (University of Zurich (CH)), Martin Van Beuzekom (Nikhef National institute for subatomic physics (NL))11/11/2025, 09:00
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Gordana Lastovicka-Medin (University of Montenegro (ME))11/11/2025, 09:05WG2 - Hybrid silicon sensors
We report the first results on irradiated 3D Double Side Double Column devices using Three-Photon and Two-Photon Absorption Transient Current Technique. Devices are fabricated at the CNM in Barcelona (3D Rd50 Project) and irradiated at the Josef Stefan Institute at two fluences: 10^15 and 10*17 neq/cm2. Multicell 3D Hex structure was studied. Additionally, we show the results from the Single...
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Yannik Sibold (University of Freiburg (DE))11/11/2025, 09:23WG2 - Hybrid silicon sensors
Sensors with fast timing capabilities are a critical component for all future tracking detectors to disentangle high multiplicity events. Double-sided silicon 3D sensors utilize columns etched orthogonal to the sensor substrate as their readout electrodes, in contrast to regular, planar detector technologies, where the electrodes are only found on the sensor surface. 3D sensors display, in...
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Kuo Ma (University of Science and Technology of China (CN))11/11/2025, 09:41WG2 - Hybrid silicon sensors
Unlike the planar detector, the distance of electrodes and the thickness of substrate is decoupling in 3D silicon detector. According to the shapes of electrodes, 3D sensors can be divided into two types: the columnar electrodes and the trenched electrodes. Through shortening the distance between the electrodes, the sensor can provide higher position resolution and can also be more irradiation...
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Gregor Kramberger (Jozef Stefan Institute (SI))11/11/2025, 09:59WG2 - Hybrid silicon sensors
Small pixel 3D sensors were produced by IME-CAS on 8 inch p type wafers of 700 Ωcm. The 30 μm thick silicon detectors have trench walls (ohmic p+) and very narrow n-column columns with diameter of only 0.5 $\mu$m. A 5 × 5 matrix of 35 × 35μm2 was measured with Two Photon Absorption Transient Current Technique. At higher voltages the devices show stable operation with high gain originating from...
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Gordana Lastovicka Medin (University of Montenegro (ME))11/11/2025, 10:17WG2 - Hybrid silicon sensors
We report the first results from our study on the non-irradiated novel silicon 3D-trench pixel detector based on 8-inch CMOS process (IME) originated from the first batch production. A novel 3D-Trench pixel sensor with an enclosed deep trench surrounding the central columnar cathode, has stronger isolation with neighbouring pixels and sharper electric field around the cathode. The first batch...
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Huimin Ji (Institute of Microelectronics, Chinese Academy of Sciences)11/11/2025, 10:35WG2 - Hybrid silicon sensors
In the construction of High-Luminosity Large Hadron Collider (HL-LHC) and Future Circular Collider (FCC) experiments, 3D pixel sensors have become indispensable components due to their superior radiation hardness, fast response, and low power consumption. However, there are still significant challenges in the process of 3D sensors manufacturing. In this work, single devices and arrays of 3D...
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Ebru Simsek (Yildiz Technical University (TR))11/11/2025, 11:23WG2 - Hybrid silicon sensors
The High-Granularity Calorimeter (HGCAL) of the CMS experiment at CERN uses radiation-hard, fast-response silicon sensors to maintain stable and precise operation during HL-LHC conditions. The sensors are fabricated on 8-inch p-type wafers with three different thicknesses (120 μm, 200 μm, and 300 μm), two main granularities (~0.5 cm2 and ~1 cm2 for standard cells), as...
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Artem Shepelev (University of Birmingham (GB))11/11/2025, 11:41WG2 - Hybrid silicon sensors
This work presents a detailed study of the timing performance and its spatial variation within the pixel of planar sensors, using the high-resolution TimePix4 beam telescope for precise, track-referenced measurements. Sensors of 200, 100, and 50 um thickness were coupled to the trigger-less TDCpix ASIC with 100 ps timestamping, originally developed for the NA62 GigaTracker at CERN. Tests were...
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Daan Jasper Oppenhuis (Nikhef National institute for subatomic physics (NL))11/11/2025, 11:59WG2 - Hybrid silicon sensors
This presentation will show results of an inverse Low-Gain Avalanche Detector (iLGAD) with a pitch of 55 μm, a thickness of 250 μm and a large-area (2 cm2), bump bonded to a Timepix4 ASIC. The Timepix4 ASIC is the latest hybrid pixel detector of the Medipix collaboration. It consists of 448 by 512 pixels with a pixel pitch of 55 µm. The best obtained time resolution for a 100 µm planar n-on-p...
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Victor Coco (CERN)11/11/2025, 12:17WG2 - Hybrid silicon sensors
The development of precision silicon sensors is a key area of advancement in high-energy physics, particularly for the innermost tracking devices of future collider experiments. These sensors require a timing resolution on the order of 50 ps, pixel pitches of 50 µm or below, and radiation tolerance up to 10$^{16-17}$n$_{eq}$.cm$^{-2}$. One such innovation is the Silicon Electron Multiplier...
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Parisa Rezaei Mianroodi11/11/2025, 12:35WG2 - Hybrid silicon sensors
This study investigates the inter-pixel distance (IPD) of 250 µm-thick
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Trench-isolated Low Gain Avalanche Detectors (Ti-LGADs) fabricated by
Micron Semiconductor Ltd. Single Photon Absorption (SPA) and Two Photon
Absorption (TPA) Transient Current Technique (TCT) scans were performed
at the Extreme Light Infrastructure (ELI ERIC) to study the dependence
of the effective IPD on interaction...