Speaker
Description
FBK has been developing in the past few years a glass-less bulk-TSV (Through-Silicon Via) technology for 2.5D and 3D interconnections of photodetectors, in particular applied to silicon photomultipliers (SiPM). Such development is essential for applications where there is a need for space management, segmentation, or minimization of external optical crosstalk by removing the top wire-bonding protective resin. In this talk, the parametric characterization of the first full production batch of SiPM sensors implementing the TSV via-last approach will be presented. This batch was produced for the CTA+ project on FBK’s NUV-HD-MT technology where the minimization of optical crosstalk, including external crosstalk, is of utmost importance. Preliminary yield characteristics and comparisons between the I-V characteristics measured with and without the TSV will be shown.