Speaker
Description
In this work, we present our studies on the time of arrival and charge collection in various 3D Silicon Double Column Double Type (3D-DCDT) structures. Both single-cell configurations (with the central cell biased and surrounding cells grounded) and multi-cell configurations (with all cells biased) are investigated, considering square and hexagonal arrangements of ohmic (p⁺) cells. The devices were characterized using Single Photon (SPA) across multiple wavelengths and Two-Photon Absorption (TPA) Time-Resolved Charge Collection (TCT) techniques at 1550 nm. Preliminary results from Three-Photon Absorption TCT measurements are also reported. Devices were fabricated at CNM Barcelona within the 3D RD50 Common Project and irradiated at the Josef Stefan Institute with fluences of 10¹⁵ and 10¹⁷ neq/cm². Measurements were conducted both with and without the amplifier connected to the sensor readout, and the results are analyzed in relation to the charge density injected in the low- and high-electric-field regions of the devices.