17–19 Feb 2026
Palazzo dei Priori, Perugia, Italy
Europe/Rome timezone

Application of exhaustive simulation flow for advanced performance prediction of monolithic active pixel sensors

17 Feb 2026, 14:19
1m
Sala dei Notari (Palazzo dei Priori, Perugia, Italy)

Sala dei Notari

Palazzo dei Priori, Perugia, Italy

Piazza 4 Novembre - PERUGIA ITALY

Speaker

Elio Sacchetti (Centre National de la Recherche Scientifique (FR))

Description

Monolithic active pixel sensor (MAPS) developments have pushed the detection performance in various directions, especially relative to timing where nanosecond-level precision is now considered. This evolution calls for a simultaneous upgrade of the simulation tools. We have developed a simulation flow that covers steps from signal creation in the sensitive volume to the output of the pixel digital logic that performs the time-of-arrival and time-over-threshold (ToA/ToT) measurements.

This approach adds several new features to the traditional use the of the TCAD - Allpix Squared duo:

  • Precise location of the n-well and deep p-well implants, imported into TCAD from the pixel layout, allows to fully understand and highlight crucial aspects of the pixel behavior ie. evolution of the leakage current and potential punch-through current depending on sensor biasing and irradiation levels.

  • Doping profile map with the damages introduced by the irradiation, obtained in the TCAD and exported to Allpix Squared, allows to reduce significantly the simulation time without loss in precision.

  • Precise timing description of the current induced at the collection node, guarantee an embedded simulation of the front-end electronics with realistic signal events. Moreover coupling Monte-Carlo simulation (Allpix Squared) with high precision electrical simulations (SPICE), allow to benefit from the accuracy of both tools in a single iteration.

We applied this methodology to the MAPS developed in the context of the Belle II vertex detector upgrade [1]. The SuperKEK-B collider, located in Tsukuba, Japan, and hosting the Belle II experiment, will be upgraded in 2032 to reach a luminosity of 6.0 cm$^{-2}$.s$^{-1}$. To deal with the higher hit rate generated at this luminosity a new fully pixelated vertex detector is being developed – the VTX. All the VTX detection layers will be equipped with the same MAPS: OBELIX (Optimized BELLE II pIXel sensor). OBELIX is required to operate at room temperature after a NIEL fluence of 5$\times$10$^{14}$ 1 MeV n$_{eq}$.cm$^{-2}$ and to provide time-stamping at 50 ns as baseline or 3 ns with increased power dissipation.

The OBELIX sensor chip is derived from the TJ-Monopix2 prototype (initially developed for ATLAS ITK outer layers [2]). Detailed in-beam characterization of TJ-Monopix2 has been performed to validate key performance [1, 2, 3].

In this contribution, we detail the key features of the exhaustive simulation, presents the outcome of the comparison with the TJ-Monopix2 measurements and discuss the interest of the methodology for the development of modern MAPS.

[1] M.Babeluk, “The DMAPS upgrade of the Belle II vertex detector”, NIM A 1064 (2024), 169428, DOI: 10.1016/j.nima.2024.169428.

[2] C.Bespin et al, “Development and characterization of a DMAPS chip in TowerJazz technology for high radiation environments” NIM A 1040 (2022) 167189, DOI: 10.1016/j.nima.2022.167189.

[3] D.Auguste et al, “ Upgrade of the Belle II Vertex Detector with Depleted Monolithic Active Pixel Sensors ”, JINST 20 (2025) 10, C10013, DOI : 10.1088/1748-0221/20/10/C10013.

Author

Elio Sacchetti (Centre National de la Recherche Scientifique (FR))

Presentation materials